Yuji Urabe

Grid-plainification enables medium-temperature PbSe thermoelectrics to cool better than Bi ₂ Te ₃

The future transistors

Self-Aligned Metal Source/Drain In_xGa_1-xAs n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers