Citation Impact
Citing Papers
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
2017
Precise optical modeling of blue light-emitting diodes by Monte Carlo ray-tracing
2010
Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates
2016
Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
2017
Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching
2017
Depletion-mode vertical Ga2O3trench MOSFETs fabricated using Ga2O3homoepitaxial films grown by halide vapor phase epitaxy
2017
(AlGa)_2O_3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity
2017
A review of Ga2O3 materials, processing, and devices
2018 Standout
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
2017
Electroluminescence enhancement of ( 11 2 ¯ 2 ) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
2011 StandoutNobel
Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3
2017
Epitaxial growth of α-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe2O3 buffer layers
2017
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
2017
Improved growth rates and purity of basic ammonothermal GaN
2014 StandoutNobel
Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire
2016
Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
2005
State-of-the-art technologies of gallium oxide power devices
2017
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Effect of carbon additive on increases in the growth rate of 2in GaN single crystals in the Na flux method
2008
Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD
2017
Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy
2006 StandoutNobel
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
2017
Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes
2017
Growth of bulk GaN crystal by Na flux method under various conditions
2011
Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition
2015
Growth of GaN crystals by Na flux LPE method
2010
Effects of YAG: Ce Phosphor Particle Size on Luminous Flux and Angular Color Uniformity of Phosphor-Converted White LEDs
2012 Standout
Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
2013 StandoutNobel
A comparative study of wet etching and contacts on ( 2 ¯ 01 )
2017
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
2007
Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials
2016
Group‐III Sesquioxides: Growth, Physical Properties and Devices
2017
Inductively coupled plasma reactive-ion etching of β-Ga2O3: Comprehensive investigation of plasma chemistry and temperature
2017
β-Ga2O3 versus ε-Ga2O3: Control of the crystal phase composition of gallium oxide thin film prepared by metal-organic chemical vapor deposition
2017
Perspective—Opportunities and Future Directions for Ga2O3
2017
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD
2016
GaN Substrates for III-Nitride Devices
2009
Heteroepitaxial growth of ε-Ga2O3 thin films on cubic (111) MgO and (111) yttria-stablized zirconia substrates by mist chemical vapor deposition
2016
Recent progress in Ga2O3power devices
2016
Epitaxial growth of ( 2 ¯ 01 )
2016
Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition
2016
Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices
2016
Towards High‐Mobility Heteroepitaxial β‐Ga2O3 on Sapphire − Dependence on The Substrate Off‐Axis Angle
2017
Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction
2017
Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane
2013 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
2017
Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate
2007
Annealing of dry etch damage in metallized and bare (-201) Ga2O3
2017
Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas inm-plane GaN Regrowth by Hydride Vapor Phase Epitaxy
2013 StandoutNobel
Carrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interface
2017
Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
2013 StandoutNobel
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage
2017
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy
2014
Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
2009
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
Inductively coupled plasma etching of bulk, single-crystal Ga2O3
2017
Wide-bandgap semiconductor materials: For their full bloom
2015
Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications
2010
Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy
2015
High temperature thermoelectric properties of optimized InGaN
2011 StandoutNobel
Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3substrates with crystal defects
2017
Stoichiometric control for heteroepitaxial growth of smooth ε-Ga2O3thin films onc-plane AlN templates by mist chemical vapor deposition
2017
Temperature and doping concentration dependence of the energy band gap in β-Ga_2O_3 thin films grown on sapphire
2017
Future of group-III nitride semiconductor green laser diodes [Invited]
2010 StandoutNobel
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
2016
Stable vicinal step orientations in m-plane GaN
2014 StandoutNobel
Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3 buffer layers
2016
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
2013 StandoutNobel
Works of Yuichi Oshima being referenced
Chlorine-based dry etching ofβ-Ga2O3
2016
Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
2003
Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy
2014
Role of TiN Film in the Fabrication of Freestanding GaN Wafers Using Hydride Vapor Phase Epitaxy with Void-Assisted Separation
2002
Thermal and electrical properties of high‐quality freestanding GaN wafers with high carrier concentration
2007
Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method
2007
Growth and etching characteristics of (001)β-Ga2O3by plasma-assisted molecular beam epitaxy
2017
Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy
2017
Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation
2005
Fabrication of Freestanding GaN Wafers by Hydride Vapor-Phase Epitaxy with Void-Assisted Separation
2002
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
2017
Thermal and Electrical Properties of High-Quality Freestanding GaN Wafers with High Carrier Concentration
2006
Preparation of 3 inch freestanding GaN substrates by hydride vapor phase epitaxy with void‐assisted separation
2008
Halide vapor phase epitaxy of twin-free α-Ga2O3on sapphire (0001) substrates
2015
Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy
2017
Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy
2015
Composition determination of β-(AlxGa1− x)2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction
2016
Ultrahigh‐speed growth of GaN by hydride vapor phase epitaxy
2011