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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−... 2011 2026 2016 2021 1.7k
  1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures (2011)
    Myoung‐Jae Lee, Chang Bum Lee et al. Nature Materials

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22 from Science/Nature 100 standout
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Works of Young‐Bae Kim being referenced

Bi-layered RRAM with unlimited endurance and extremely uniform switching
2011
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
2011 Standout

Author Peers

Author Last Decade Papers Cites
Young‐Bae Kim 4064 1187 770 902 237 7.1k
Xi Xie 2419 1378 1674 451 229 9.5k
Xiao Liu 993 979 758 251 205 6.2k
Kyung Hyun Choi 3375 1359 357 243 263 6.3k
Jian Chen 2856 1172 1671 254 382 9.0k
Qian Wu 2301 1071 1933 347 211 8.8k
Cheng Jiang 2208 1208 1921 1067 212 6.1k
Wei Chen 1818 2357 1485 560 310 8.4k
Jie Zhang 2100 2011 2654 277 298 8.1k
Xingcai Zhang 2082 3943 2350 938 210 13.1k
Zhanfeng Cui 1342 767 2414 367 327 11.0k

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