Yeqing Lu

Electronics based on two-dimensional materials

Tunnel Field-Effect Transistors: State-of-the-Art

Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization

Tunneling Transistors Based on Graphene and 2-D Crystals

III–V compound semiconductor transistors—from planar to nanowire structures

AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned