Citation Impact
Citing Papers
Thermometry at the nanoscale
2012 Standout
Terahertz quantum-cascade lasers
2007 Standout
Laser diode photoacoustic and FTIR laser spectroscopy of formaldehyde in the 2.3 μm and 3.5 μm spectral range
2009
Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy
1999
Al(As,Sb) heterobarriers on InAs: growth, structural properties and electrical transport
1998 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Staggered to straddling band lineups in InAs/Al(As, Sb)
1999 StandoutNobel
Operational experience with a valved antimony cracker source for use in molecular beam epitaxy
1998 StandoutNobel
Broadband semiconductor saturable absorber mirrors in the 1.55-μm wavelength range for pulse generation in fiber lasers
2002
Optical gas sensing: a review
2012
Terahertz transfer onto a telecom optical carrier
2007
Improved composition control of digitally grown AlAsSb lattice-matched to InP
1999 StandoutNobel
Formaldehyde in the Indoor Environment
2010 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Thermography techniques for integrated circuits and semiconductor devices
2007
Surface morphology of GaSb grown on (111)B GaAs by molecular beam epitaxy
1999 StandoutNobel
Graphene Mode-Locked Ultrafast Laser
2010 Standout
Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy
1996
The physics and technology of gallium antimonide: An emerging optoelectronic material
1997
Molecular beam epitaxy of quantum well structures
1996
Works of Y. Rouillard being referenced
GaSb based lasers operating near 2.3 μm for high resolution absorption spectroscopy
2004
Trace gas detection with antimonide-based quantum-well diode lasers
2002
Room-temperature diode laser photoacoustic spectroscopy near 2.3 μm
2005
Measurements of optical losses in mid-infrared semiconductor lasers using Fabry–Pérot transmission oscillations
2004
Looking into the volcano with a Mid-IR DFB diode laser and Cavity Enhanced Absorption Spectroscopy
2006
Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm
2003
Optical properties of GaSbAlSb heterostructures grown by molecular beam epitaxy
1993
On the use of dimeric antimony in molecular beam epitaxy
1995
High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates
1995
Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 µm wavelength range around room temperature
2011
High reflectivity 1.55 μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy
1994
Quantitative thermal imaging of GaInAsSb/AlGaAsSb laser diodes by thermoreflectance
2005