Immediate Impact

21 standout
Sub-graph 1 of 7

Citing Papers

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
2024 Standout
Stability, Reliability, and Robustness of GaN Power Devices: A Review
2023 Standout
3 intermediate papers

Works of Y. Otoki being referenced

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
2005
High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate
2003

Author Peers

Author Last Decade Papers Cites
Y. Otoki 220 247 71 133 13 300
Carlos Anthony Sanchez 160 182 59 155 22 298
Kazuhide Sumiyoshi 179 284 117 142 9 303
Zhongda Li 265 249 72 133 21 349
Tianli Duan 204 178 32 123 17 298
Kenji Shimoyama 224 184 116 79 14 363
R. Venegas 238 223 98 125 25 328
Quentin Diduck 276 269 67 115 11 337
C. J. Merz 176 198 121 104 13 325
Fabio Alessio Marino 250 266 79 102 18 322
Sreenidhi Turuvekere 295 335 76 155 12 369

All Works

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Rankless by CCL
2026