Citation Impact
Citing Papers
ZnO Nanowire Arrays for Enhanced Photocurrent in PbS Quantum Dot Solar Cells
2013 StandoutNobel
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
2014 StandoutNobel
Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction
2009
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
Atomic-scale nanofacet structure in semipolar $(20\bar{2}\bar{1})$ and $(20\bar{2}1)$ InGaN single quantum wells
2014 StandoutNobel
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
2008
Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition
2009
Nitride Nanocolumns for the Development of Light-Emitting Diode
2009
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
2009 StandoutNobel
Structural and optical properties of InGaN∕GaN multiple quantum wells grown on nano-air-bridged GaN template
2006
Electroluminescence enhancement of ( 11 2 ¯ 2 ) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
2011 StandoutNobel
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
2009
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
2013 StandoutNobel
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
2007
Electrical and optical properties of thick highly doped p‐type GaN layers grown by HVPE
2008
Nonpolara-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
2011 StandoutNobel
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N
2013 StandoutNobel
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
2011 StandoutNobel
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
2013 StandoutNobel
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
2017
Development and prospects of nitride materials and devices with nonpolar surfaces
2008
Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization
2013 StandoutNobel
Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition
2007
Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
2010
Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE
2007 StandoutNobel
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Understanding nonpolar GaN growth through kinetic Wulff plots
2008
Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays
2014 StandoutNobel
Effect of Misorientation Angle of r-Plane Sapphire Substrate on a-Plane GaN Grown by Metalorganic Vapor Phase Epitaxy
2008
Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition
2007
Polarization fields in wurtzite strained layers grown on () planes
2008
Novel Epitaxial Nanostructures for the Improvement of InGaN LEDs Efficiency
2009
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH_3 interrupted etching
2014 StandoutNobel
One-dimensional ZnO nanostructures: Solution growth and functional properties
2011
Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
2008
Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
2009 StandoutNobel
Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
2011 StandoutNobel
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
2010
Strain in Si doped GaN and the Fermi level effect
2011
Hexagonal-based pyramid void defects in GaN and InGaN
2012
Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate
2009
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
2008
Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates
2013 StandoutNobel
X-ray diffraction of III-nitrides
2009
GaN Overgrowth on Thermally Etched Nanoporous GaN Template
2013 StandoutNobel
Works of Y. Fu being referenced
A study of GaN regrowth on the micro‐facetted GaN template formed by in‐situ thermal etching
2005
Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN
2006
Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy
2005
Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates
2002
Forward-current electroluminescence from GaN/ZnO double heterostructure diode
2005
Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy
2005
Optimization of a-plane GaN growth by MOCVD on r-plane sapphire
2006
Effect of potential fluctuations on photoluminescence in Mg‐doped GaN
2005
Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork
2007
Characterization of MOCVD grown GaN on porous SiC templates
2005
Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy
2006
Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates
2005