Citation Impact
Citing Papers
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Observation of Strong Ordering inGa x In 1 − x P
1988
Structural characterization of low-temperature molecular beam epitaxial In0.52Al0.48As/InP heterolayers
1992
Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
1998
Wide bandgap GaN-based semiconductors for spintronics
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First-principles calculation of alloy phase diagrams: The renormalized-interaction approach
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Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD
1988
High valence-band offset of GaSbAs-InAlAs quantum wells grown by molecular beam epitaxy
1992
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
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Band gaps and spin-orbit splitting of ordered and disorderedAl x Ga 1 − x As Ga As x Sb 1 − x
1989
Ordering-induced band-gap reduction inInAs 1 − x Sb x
1992
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Ordering of isovalent intersemiconductor alloys
1988
Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be-doped GaAsSb lattice matched to InP
1994
Electronic properties of random alloys: Special quasirandom structures
1990 Standout
Optical properties of molecular beam epitaxially grown GaAs1−xSbx (0<x<0.5) on GaAs and InP substrates
1988
Ferromagnetism of ZnO and GaN: A Review
2005
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Preparation and properties of antiperovskite-type nitrides: InNNi3 and InNCo3
2009
Negative spin-orbit bowing in semiconductor alloys
1989
Moving photoluminescence bands in GaAs1−xSbx layers grown by molecular beam epitaxy on InP substrates
1994
Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
1992 StandoutNobel
First-principles calculation of temperature-composition phase diagrams of semiconductor alloys
1990
Band parameters for nitrogen-containing semiconductors
2003 Standout
Works of Y. E. Ihm being referenced
Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InP
1987
Magnetotransport of p-type GaMnN assisted by highly conductive precipitates
2003
Optical Characterization Of GaAs1-xSbx And GaAs1-xSbx/GaAs Strained Layer Superlattices
1988
Molecular beam epitaxial growth of GaN and GaMnN using a single precursor
2004
Behavior of precipitates in GaMnN
2004
Ordering in GaAs1−xSbx grown by molecular beam epitaxy
1987
Atomic ordering in GaAs0.5Sb0.5 grown by molecular beam epitaxy
1989