Immediate Impact

2 standout

Citing Papers

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
2016 Standout
Metal–Oxide RRAM
2012 Standout
1 intermediate paper

Works of X. Huang being referenced

Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors
2010

Author Peers

Author Last Decade Papers Cites
X. Huang 126 36 33 32 147
N. Haralabidis 175 33 23 18 192
G. Robert-Demolaize 92 56 12 20 113
O. Rossetto 74 36 26 30 108
Filippo Mele 72 36 52 25 92
S.S. Frank 167 39 29 20 203
A. Mapelli 49 67 40 26 109
O. Dvornikov 76 45 26 44 115
Kenji Fukami 73 29 65 28 140
M. Kalliokoski 44 61 33 29 109
K. Schindl 101 61 27 29 167

All Works

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2026