Citation Impact
Citing Papers
Improved signal-to-noise ratio in spectral-domain compared with time-domain optical coherence tomography
2003 Standout
Recent developments in compact ultrafast lasers
2003 StandoutNature
Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages
2018 StandoutNatureNobel
Micrometre-scale silicon electro-optic modulator
2005 StandoutNature
Ultra-low-energy all-CMOS modulator integrated with driver
2010
Large single-molecule fluorescence enhancements produced by a bowtie nanoantenna
2009 StandoutNobel
Device Requirements for Optical Interconnects to Silicon Chips
2009 Standout
Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers
1991
Measurement of carrier escape rates, exciton saturation intensity, and saturation density in electrically biased multiple-quantum-well modulators
1994
Rationale and challenges for optical interconnects to electronic chips
2000
Model dispersive media in finite-difference time-domain method with complex-conjugate pole-residue pairs
2006
Optical interconnects to silicon
2000
Intensity dependent time‐resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a‐plane and planar c‐plane GaN
2005 StandoutNobel
Optoelectronic-VLSI: photonics integrated with VLSI circuits
1998
The future of wires
2001 Standout
Optical-confinement-factor dependencies of the K factor, differential gain, and nonlinear gain coefficient for 1.55 mu m InGaAs/InGaAsP MQW and strained-MQW lasers
1991 StandoutNobel
Scaling optoelectronic-VLSI circuits into the 21st century: a technology roadmap
1996
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Nonlinear Optics in Semiconductors
1994
Complete optical isolation created by indirect interband photonic transitions
2009 Standout
Femtosecond pulse shaping using spatial light modulators
2000 Standout
High-Speed Dynamics in InP Based Multiple Quantum Well Lasers
1993
InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD
1993
GaAs MQW modulators integrated with silicon CMOS
1995
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
2012
Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers
1998 StandoutNobel
3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
2001 Standout
Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
2000 StandoutNobel
Survey on Free Space Optical Communication: A Communication Theory Perspective
2014 Standout
Silicon optical modulators
2010 Standout
Field-dependent carrier decay dynamics in strainedIn x Ga 1 − x N / G a N
2002
A pump and probe study of photoinduced internal field screening dynamics in an AlGaN/GaN single-quantum-well structure
2000 StandoutNobel
Advances in MOVPE, MBE, and CBE
1992
Skew and jitter removal using short optical pulses for optical interconnection
2000
GaAs-on-Si modulator using a buried silicide reflector
1992
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasers
1996 Standout
Simultaneous measurements of electron and hole sweep-out from quantum wells and modeling of photoinduced field screening dynamics
1992
Simultaneous measurement of electron and hole escape times from biased single quantum wells
1992
Works of W.Y. Jan being referenced
Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy
1991
InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-/spl mu/m applications grown by gas-source MBE
1994
GaAs-AlGaAs multiquantum well reflection modulators grown on GaAs and silicon substrates
1989
1-Gb/s two-beam transimpedance smart-pixel optical receivers made from hybrid GaAs MQW modulators bonded to 0.8 μm silicon CMOS
1996
Interleaved-contact electroabsorption modulator using doping-selective electrodes with 25 degrees C to 95 degrees C operating range
1993
GaAs 850 nm modulators solder-bonded to silicon
1993
Independence of absorption coefficient-linewidth product to material system for multiple quantum wells with excitons from 850 nm to 1064 nm
1993
High-speed, polyimide-based semi-insulating planar buried heterostructures
1987
Stacked-diode electroabsorption modulator
1994
Quantum well carrier sweep out: relation to electroabsorption and exciton saturation
1991