Standout Papers
Citation Impact
Citing Papers
A fused-ring based electron acceptor for efficient non-fullerene polymer solar cells with small HOMO offset
2016
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Organic solar cells based on non-fullerene acceptors
2018 Standout
Electrodeposition of Ge, Si and SixGe1−x from an air- and water-stable ionic liquid
2008
Electrochemical Considerations for Determining Absolute Frontier Orbital Energy Levels of Conjugated Polymers for Solar Cell Applications
2011 Standout
Optical gain in silicon nanocrystals
2000 StandoutNature
Ionic-liquid materials for the electrochemical challenges of the future
2009 Standout
Small molecule semiconductors for high-efficiency organic photovoltaics
2012 Standout
Steric Control of the Donor/Acceptor Interface: Implications in Organic Photovoltaic Charge Generation
2011
Role of the Charge Transfer State in Organic Donor–Acceptor Solar Cells
2010
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Simultaneous Enhancement of Open‐Circuit Voltage, Short‐Circuit Current Density, and Fill Factor in Polymer Solar Cells
2011 Standout
Over 16% efficiency organic photovoltaic cells enabled by a chlorinated acceptor with increased open-circuit voltages
2019 Standout
Polymer Photovoltaics with Alternating Copolymer/Fullerene Blends and Novel Device Architectures
2010
Growth and applications of Group III-nitrides
1998
Electron and Ambipolar Transport in Organic Field-Effect Transistors
2007 Standout
Control of strain in GaN using an In doping-induced hardening effect
2001 StandoutNobel
Optical characterization of lateral epitaxial overgrown GaN layers
1998 StandoutNobel
1998
Stress evolution during metalorganic chemical vapor deposition of GaN
1999
Photoelectron spectroscopy of surface states on semiconductor surfaces
1988
Structure and Nanostructure in Ionic Liquids
2015 Standout
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys
1998
Graphene Photonics, Plasmonics, and Broadband Optoelectronic Devices
2012 Standout
X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
1998
Elimination of misfit dislocations in Si1−xGex/Si heterostructures by limited-area molecular-beam epitaxial growth
1992
Growth of GaN(0001)1×1 on Al2O3(0001) by gas-source molecular beam epitaxy
1992
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Charge carrier recombination in organic solar cells
2013
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Open circuit voltage of organic solar cells: an in-depth review
2015
Optical properties of wurtzite GaN epilayers grown onA
1998 StandoutNobel
The effect of structural dimensionality on carrier mobility in lead-halide perovskites
2019 StandoutNobel
Optical and Structural Characterization of Erbium-Doped TiO[sub 2] Xerogel Films Processed on Porous Anodic Alumina
2001
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
The Past, Present, and Future of Silicon Photonics
2006 Standout
Organic Semiconductor Lasers
2007 Standout
Tetrahedral semiconductors: Constancy of the midgap energies with respect to the vacuum level
1988
Effect of strain on GaN exciton spectra
1996
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Nonfullerene Acceptor Molecules for Bulk Heterojunction Organic Solar Cells
2018 Standout
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Influences of Surface Roughness of ZnO Electron Transport Layer on the Photovoltaic Performance of Organic Inverted Solar Cells
2012
Light emission from a polymer transistor
2004
Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
1997
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
Variation of GaN valence bands with biaxial stress and quantification of residual stress
1997 StandoutNobel
Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
1993
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
2013 StandoutNobel
Lanthanide-Based Luminescent Hybrid Materials
2009 Standout
Relating the open-circuit voltage to interface molecular properties of donor:acceptor bulk heterojunction solar cells
2010
Silicon sees the light
1995 Nature
Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
2012 StandoutNobel
Organic Photovoltaics over Three Decades
2018
Strain in cracked AlGaN layers
2002 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
1998 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Spatially resolved cathodoluminescence spectra of InGaN quantum wells
1997 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Growth and characterization of cubic GaN
1997
High-efficiency solution-processed perovskite solar cells with millimeter-scale grains
2015 StandoutScience
Recent Advances in Bulk Heterojunction Polymer Solar Cells
2015 Standout
Trends in residual stress for GaN/AlN/6H–SiC heterostructures
1998 StandoutNobel
Open-Circuit Voltage Deficit, Radiative Sub-Bandgap States, and Prospects in Quantum Dot Solar Cells
2015 StandoutNobel
Revealing the Dynamics of Charge Carriers in Polymer:Fullerene Blends Using Photoinduced Time-Resolved Microwave Conductivity
2013
Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates
1997 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Characterization of InGaN multiquantum well structures for blue semiconductor laser diodes
1997
Fullerene‐Free Polymer Solar Cells with over 11% Efficiency and Excellent Thermal Stability
2016 Standout
Heterojunction band offset engineering
1996
Substrates for gallium nitride epitaxy
2002
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Works of W.-X. Ni being referenced
New method to study band offsets applied to strainedSi / Si 1 − x Ge x ( 100 )
1987
Fabrication and characterisation of Si-Si 0.7 Ge 0.3 quantum dot lightemitting diodes
1995
Growth and characterization of strain-symmetried Si/SiGe THz quantum cascade structures
2005
Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy
1989
Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy
1997
Surface electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge studied with photoemission and inverse photoemission
1987
Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy
1988
Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates
1996
Observation of a Charge Transfer State in Low‐Bandgap Polymer/Fullerene Blend Systems by Photoluminescence and Electroluminescence Studies
2009
Band offsets in pseudomorphically grown Si/Si 1 − x Ge x
1990
n-Si/p-Si1−xGex/n-Si double-heterojunction bipolar transistors
1988
Si/SiGe/Si:Er:O light-emitting transistors prepared by differential molecular-beam epitaxy
2001
High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layers
1996 StandoutNobel