Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Classification of Lattice Defects in the Kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 Earth‐Abundant Solar Cell Absorbers
2013
Compensation ofp
1995
High-efficiency crystalline silicon solar cells: status and perspectives
2016
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010 StandoutNobel
First-principles calculations for point defects in solids
2014 Standout
A review of energy sources and energy management system in electric vehicles
2012 Standout
Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
2011 StandoutNobel
A review of Ga2O3 materials, processing, and devices
2018 Standout
Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies
2002
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
Progress and challenges for next-generation high-efficiency multijunction solar cells
2010
Investigation of Bismuth Triiodide (BiI3) for Photovoltaic Applications
2015 StandoutNobel
Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes
2011
A comprehensive review of ZnO materials and devices
2005 Standout
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites
2015
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Renewable energy resources: Current status, future prospects and their enabling technology
2014 Standout
Device Characteristics of CZTSSe Thin‐Film Solar Cells with 12.6% Efficiency
2013 Standout
Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells
2013 StandoutNobel
Effect of nitrogen on the temperature dependence of the energy gap inIn x Ga 1 − x As 1 − y N y / GaAs
2001
Oxide bipolar electronics: materials, devices and circuits
2016
Theoretical Insights into Photoinduced Charge Transfer and Catalysis at Oxide Interfaces
2013
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Influence of Defects on Excited-State Dynamics in Lead Halide Perovskites: Time-Domain ab Initio Studies
2019
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
2010 StandoutNobel
Experimental studies of the conduction-band structure of GaInNAs alloys
2002
Intrinsic limitations to the doping of wide-gap semiconductors
2001
Thin-film Sb2Se3 photovoltaics with oriented one-dimensional ribbons and benign grain boundaries
2015 Standout
An efficient solar-enabled 2D layered alloy material evaporator for seawater desalination
2018
Influence of strain on the band gap energy of wurtzite InN
2009
Development and prospects of nitride materials and devices with nonpolar surfaces
2008
Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO
2001 Standout
InGaN Solar Cells: Present State of the Art and Important Challenges
2012
Electronic structure ofIn y Ga 1 − y As 1 − x N x / GaAs k ⋅ p
2002
Electric vehicles standards, charging infrastructure, and impact on grid integration: A technological review
2019 Standout
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Band anticrossing in highly mismatched III V semiconductor alloys
2002
III N V semiconductors for solar photovoltaic applications
2002
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Effects of electron concentration on the optical absorption edge of InN
2004
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Comparison between Polar (0001) and Semipolar (1122) Nitride Blue–Green Light-Emitting Diodes Grown on c- and m-Plane Sapphire Substrates
2009
Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?
2016 Standout
Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects
2017 StandoutNobel
Hybrid battery/supercapacitor energy storage system for the electric vehicles
2017 Standout
High-Efficiency Perovskite Solar Cells
2020 Standout
Free-to-bound radiative recombination in highly conducting InN epitaxial layers
2004 StandoutNobel
Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%
2017 Standout
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Unique Properties of Halide Perovskites as Possible Origins of the Superior Solar Cell Performance
2014 Standout
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes
2011 StandoutNobel
Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
2009 StandoutNobel
Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
2007
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
III–Nitride UV Devices
2005
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
Optical properties of InN with stoichoimetry violation and indium clustering
2005 StandoutNobel
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
2014 StandoutNobel
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates
2013 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
A review of supercapacitor modeling, estimation, and applications: A control/management perspective
2017 Standout
A review on the state-of-the-art technologies of electric vehicle, its impacts and prospects
2015 Standout
Correlation between strain, optical and electrical properties of InN grown by MBE
2003
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Semipolar (2021) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
2013 StandoutNobel
Works of Władek Walukiewicz being referenced
Pressure dependence of the photoluminescence spectra of nitrogen-doped ZnSe: Evidence of compensating deep donors
1994
Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01
2000
Demonstration of a III–Nitride/Silicon Tandem Solar Cell
2009
Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4 thin films
2012
NixCd1−xO: Semiconducting alloys with extreme type III band offsets
2015
Band structure engineering of ZnO1−xSex alloys
2010
Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer
2013
Electron cyclotron effective mass in indium nitride
2010
Group III-nitride alloys as photovoltaic materials
2004
Growth of Thick InN by Molecular Beam Epitaxy
2002
Bistable Amphoteric Native Defect Model of Perovskite Photovoltaics
2018
Photovoltaic action from InxGa1‐xN p‐n junctions with x > 0.2 grown on silicon
2011
Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
2003
Migration of compensating defects in p-type ZnSe during annealing
1996
Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy
2002
Band Gap Engineering of Oxide Photoelectrodes: Characterization of ZnO1–xSex
2012