Citation Impact
Citing Papers
The Chemical Imagination at Work in Very Tight Places
2007 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
2014 StandoutNobel
Average forces in bound and resonant quantum states
2001
Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies
2006
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
2009 StandoutNobel
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
Dynamic properties of double-barrier resonant-tunneling structures
1991 Nobel
Photoluminescence studies of 〈100〉 and 〈111〉In x Ga 1 − x A s / G a A s
1999
Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well
2010
Magneto-optical spectrum of donors inAl x Ga 1 − x
1990
Light emission versus energy gap in group‐III nitrides: hydrostatic pressure studies
2003
Time-dependent transport in interacting and noninteracting resonant-tunneling systems
1994 Standout
Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer
1998
Exciton et polariton dans les semiconducteurs cubiques : étude de la réflectivité
1987
Conduction electrons in GaAs: Five-levelk⋅ptheory and polaron effects
1990
Determination of the spin-exchange interaction constant in wurtzite GaN
1998 StandoutNobel
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
2007 StandoutNobel
The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films
2004
Tunneling through ultrathin SiO2 gate oxides from microscopic models
2001
On the origin of efficiency roll-off in InGaN-based light-emitting diodes
2008
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
1997
Recombination processes in InxGa1−xN light-emitting diodes studied through optically detected magnetic resonance
1998 StandoutNobel
Formation of a superlattice of ionized resonant donors or acceptors in semiconductors
1986
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Site-selective x-ray absorption fine structure: Selective observation of Ga local structure in DX center of Al0.33Ga0.67As:Se
1999 StandoutNobel
Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes
2008
Decomposition of the hexagonal copper hydride at high pressure
2004
Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides
2004 StandoutNobel
Diluted magnetic semiconductors
1988 Standout
Effect of hydrostatic pressure and alloy composition on sulfur- and selenium-related impurity states in heavily dopedn-typeGa x In 1 − x
1986
Investigation of blue InGaN light-emitting diodes with step-like quantum well
2011
Band parameters for nitrogen-containing semiconductors
2003 Standout
Nitride-Based Green Light-Emitting Diodes With Various p-Type Layers
2007
Disclosing the Complex Structure of UiO-66 Metal Organic Framework: A Synergic Combination of Experiment and Theory
2011 Standout
Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN∕GaN multiple quantum wells on bulk GaN substrates
2005
Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
2010 StandoutNobel
Works of Witold Trzeciakowski being referenced
High Pressure Science & Technology: Proceedings of the Joint XV AIRAPT and XXXIII EHPRG International Conference Warsaw, Poland, September 11-15, 1995.
1996
Density of states in a resonant-tunneling structure
1989
A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal
2004
Electric-field effects in semiconductor quantum wells
1991
The effect of pressure on the luminescence from GaAs/AlGaAs quantum wells
1994
Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure
1993
The dielectric constant in narrow-gap semiconductors
1984
Shallow donors in magnetic fields in zinc-blende semiconductors. III. Subtleties of the conduction band and spin doublets in GaAs
1988
Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN
2005
Highly localized donor states in InSb and their pressure dependence
1983
New method for studying deformation effects on the optical spectra of quantum wells
1995
Shallow donors in magnetic fields in zinc-blende semiconductors. I. Theory
1986
Boundary conditions and interface states in heterostructures
1988
Effective-mass approximation in semiconductor heterostructures: One-dimensional analysis
1988