Citation Impact
Citing Papers
The rise of graphene
2007 StandoutNobel
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
2010 Standout
Pharmacological modulation of Paf‐induced rat pleurisy and its role in inflammation by zymosan
1989
A topological Dirac insulator in a quantum spin Hall phase
2008 StandoutNature
Pulmonary immune cells in health and disease: the eosinophil leucocyte (Part II)
1994
Superconductivity in diamond
2004 StandoutNatureNobel
Slater Insulator in Iridate Perovskites with Strong Spin-Orbit Coupling
2016 StandoutNobel
Correlated insulator behaviour at half-filling in magic-angle graphene superlattices
2018 StandoutNature
OPGL is a key regulator of osteoclastogenesis, lymphocyte development and lymph-node organogenesis
1999 StandoutNature
The missing memristor found
2008 StandoutNature
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Unconventional superconductivity in magic-angle graphene superlattices
2018 StandoutNature
Inhibition of eosinophil chemotaxis by chronic blockade of nitric oxide biosynthesis
1996
Energy Bands of Alkali Metals. II. Fermi Surface
1962
Transport properties ofn -type metalorganic chemical-vapor-depositedAl x Ga 1 − x As ( 0 ≤ x ≤ 0 . 6 )
1984
GaAs lower conduction-band minima: Ordering and properties
1976
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
2000 StandoutScience
Observation of Higher Sub-band inn -Type (100) Si Inversion Layers
1975 StandoutNobel
Surface generation and detection of phonons by picosecond light pulses
1986 Standout
2D materials and van der Waals heterostructures
2016 StandoutScienceNobel
Picosecond Photoinduced Dichroism inTrans-( CH ) x : Direct Measurement of Soliton Diffusion
1982 StandoutNobel
Structure and existence of the first sharp diffraction peak in amorphous germanium prepared in UHV and measured in-situ
1988
X-ray diffraction studies of the metal insulator transitions in Ti4O7, V4O7 and VO2
1970
Pressure coefficient of the direct band gap ofAl x Ga 1 − x As from optical absorption measurements
1979
Structural Aspects of the Metal-Insulator Transitions in Cr-Doped VO 2
1972
Electron transport phenomena in small-gap semiconductors
1974
Magnetic and transport studies of pureV 2 O 3 under pressure
1994
Bonding Changes in Compressed Superhard Graphite
2003 StandoutScienceNobel
Piezoelectricity in Zincblende‐ and Wurtzite‐Type Crystals
1973
Scattering parameters from an analysis of the hall electron mobility in Ga1−Al As alloys
1982
Metal-insulator transitions
1998 Standout
The Effect of Vanadium on Physicochemical and Electrochemical Performances of LiFePO[sub 4] Cathode for Lithium Battery
2010
Dielectric Classification of Crystal Structures, Ionization Potentials, and Band Structures
1969
TRANSVERSE NEGATIVE DIFFERENTIAL MOBILITIES FOR HOT ELECTRONS AND DOMAIN FORMATION IN GERMANIUM
1968 StandoutNobel
Proprietes physiques et structurales de la phase CrxV1−xO2
1971
Picosecond luminescence and competing nonradiative processes inAs 2 S 3 glass
1982 StandoutNobel
Intrinsic Absorption-Edge Spectrum of Gallium Phosphide
1966
Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3
2009 StandoutScience
Energy-Band Structure and Optical Spectrum of Grey Tin
1970
Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition Energies
1969
Electronic Raman Scattering by Acceptors in GaP
1966 StandoutNobel
The metal–non-metal transition in nickel sulphide (NiS)
1971
Stress-Induced Band Gap and Related Phenomena in Gray Tin
1972
Piezoelectric Polaron Effects in CdS
1964 StandoutNobel
Piezoresistive Properties of Reduced Strontium Titanate
1966
Electrical Properties ofTi 2 O 3 Single Crystals
1968
Evaluation of the hydrostaticity of a helium-pressure medium with powder x-ray diffraction techniques
2001
Electronic structure of Mott insulators
1977
Preparation and melting of amorphous silicon by molecular-dynamics simulations
1988
A genome-wide analysis of immune responses in Drosophila
2001 StandoutNobel
Liquid Exfoliation of Layered Materials
2013 StandoutScience
Local-density self-consistent energy-band structure of cubic CdS
1978
Theoretical Metastability of Semiconductor Crystallites in High-Pressure Phases, with Application to β-Tin Structure Silicon
1996 StandoutNobel
Exchange Effects in theLi K Edge
1976 StandoutNobel
Electrical properties of the( V 1 − x Cr x ) 2 O 3 system
1980
Surface quantum oscillations in silicon (100) inversion layers under uniaxial pressure
1978 StandoutNobel
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Band gap of Hg chalcogenides: Symmetry-reduction-induced band-gap opening of materials with inverted band structures
2006
Forward and reverse high-pressure transitions in bulklike AlAs and GaAs epilayers
1992
Characteristic Structural Phase Transition in Perovskite-Type Compounds
1968 StandoutNobel
Piezoelectricity and Conductivity in ZnO and CdS
1960
Temperature and pressure dependence of the Γ1celectron mobility in GaSb
1973
The two components of the crystallographic transition in VO2
1971 StandoutNobel
A neutron diffraction study of the structure of evaporated amorphous germanium
1982
Superconductivity
1964 StandoutScienceNobel
Generation of amorphous-silicon structures with use of molecular-dynamics simulations
1987
Dimerization of a linear Heisenberg chain in the insulating phases ofV 1 − x Cr x O 2
1974
Reflectivity of Gray Tin Single Crystals in the Fundamental Absorption Region
1962
Volume Dependence of the Spin-Orbit Splitting in Representative Semiconductors from High-Pressure Electroreflectivity Measurements and Relativistic Orthogonalized-Plane-Wave Calculations
1971
Pharmacological and immunohistochemical evidence for a functional nitric oxide synthase system in rat peritoneal eosinophils
1997 StandoutNobel
Modeling the structure of amorphous tetrahedrally coordinated semiconductors. I
1974
Topological insulators with inversion symmetry
2007 Standout
Electron transport and band structure ofGa 1 − x Al x As alloys
1980
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Ground-state electronic properties of diamond in the local-density formalism
1977
Ab initiomolecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
1994 Standout
Structure and the existence of the first sharp diffraction peak in amorphous germanium prepared in UHV and measured in-situ
1987
Pressure-Induced Structural Transformations in Si Nanocrystals: Surface and Shape Effects
1996 StandoutNobel
Relaxed continuous random network models
1974
Intrinsic Piezobirefringence in GaSb, InAs, and InSb
1971
The optical absorption edge of brookite TiO2
2005
Hydrostatic-Pressure Dependence of the Electronic Properties of VO 2 Near the Semiconductor-Metal Transition Temperature
1969
Metal-to-semiconductor transition at the magnetic ordering temperature of NiS
1967
Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes
1961
The role of chemical mediators in the pathogenesis of inflammation with emphasis on the kinin system
1990
Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
1966 StandoutNobel
A model for the metal-to-insulator transition in V2O3
1973
Temperature and pressure dependences of the dielectric constants of semiconductors
1983
Gallium Phosphide: Observation of theΓ − L Indirect Transition by Electroabsorption
1978
Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium
1966
Self-interaction correction to density-functional approximations for many-electron systems
1981 Standout
Undulation Spectra of GaP Associated with the Isoelectronic Trap N
1971 StandoutNobel
Dependence of the indirect energy gap of silicon on hydrostatic pressure
1975
Synthesis of Superheavy Elements in the r-Process
1971 StandoutNatureNobel
ELECTRON TUNNELING FROM METAL TO InSb
1966 StandoutNobel
Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric Constant
1969
Binding to Isoelectronic Impurities in Semiconductors
1972 StandoutNobel
Microtesla MRI with a superconducting quantum interference device
2004 StandoutNobel
The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
1969 Standout
Electronic and ionic transport properties and other physical aspects of perovskites
2004 StandoutNobel
Computer restructuring of continuous random tetrahedral networks
1975
Electrical phenomena in amorphous oxide films
1970
Vacuum-ultraviolet reflectance and photoemission study of the metal-insulator phase transitions inVO 2 ,V 6 O 13 , andV 2 O 3
1990
Observation of Sixfold Valley Degeneracy in Electron Inversion Layers on Si(111)
1979 StandoutNobel
Metal-to-Semiconductor Transition in Hexagonal NiS
1968
Lattice Dynamics of Grey Tin and Indium Antimonide
1971
Titanium Dioxide Nanomaterials: Synthesis, Properties, Modifications, and Applications
2007 Standout
Enhanced prostanoid release from monocytes of patients with rheumatoid arthritis and active systemic lupus erythematosus.
1985
Theory of geminate recombination on a lattice
1984
Superconductivity in Many-Valley Semiconductors and in Semimetals
1964
Metal-Insulator Transition in( V 1 − x Cr x ) 2 O 3
1970
A silicon-based nuclear spin quantum computer
1998 StandoutNature
Ultimate Limits to Intercalation Reactions for Lithium Batteries
2014 StandoutNobel
Molecular-dynamics simulation of amorphous germanium
1986
Colloquium: Topological insulators
2010 Standout
Radial distribution functions of amorphous silicon
1989
Optical Properties and Band Structure of Wurtzite-Type Crystals and Rutile
1965
Preparation and properties of the oxyfluoride systems V2O5−xFx and VO2−xFx
1971
Electronic Specific Heat of Metallic Ti-DopedV 2 O 3
1971
Temperature-Independent Photoconductivity in Thin Films of Semiconducting Polymers: Photocarrier Sweep-Out Prior to Deep Trapping
1998 StandoutNobel
Effective masses and valence-band splittings in GaN and AlN
1997
Polymorphic stability of AlAs/GaAs superlattices at high pressure
1992
Velocity saturation and the conduction-band structure of Ga1−xAlxAs under pressure
1977
Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV
1967
Electroreflectance at a Semiconductor-Electrolyte Interface
1967
The Relationship Between High-Temperature Superconductivity and the Fractional Quantum Hall Effect
1988 StandoutScienceNobel
Works of William Paul being referenced
Effect of Pressure on Interband Reflectivity Spectra of Germanium and Related Semiconductors
1967
Cutaneous permeability responses to bradykinin and histamine in the guinea‐pig: possible differences in their mechanism of action
1994
Picosecond relaxations in amorphous semiconductors
1980
Band Structure of Gallium Phosphide from Optical Experiments at High Pressure
1964
PAF-acether-induced plasma exudation in rat skin is independent of platelets and neutrophils.
1984
Band Structure of Gray Tin
1963
Semiconductor-To-Metal Transition inV 2 O 3
1967
Conduction-Band Structure of GaSb from Pressure Experiments to 50 kbar
1968
Amorphous germanium II. Structural properties
1973
Evidence for Impurity States Associated with High-Energy Conduction-Band Extrema inn -CdTeCdTe
1966
Is there an intimate relation between amorphous and crystalline semiconductors?
1972
Hydrostatic-pressure dependence of band offsets in GaAs/Al x Ga 1 − x As heterostructures
1994
Effect of High Pressure on Some Hot Electron Phenomena inn -Type Germanium
1960
Amorphous germanium I. A model for the structural and optical properties
1973
Cromoglycate (DSCG) inhibits responses to platelet-activating factor (PAF-acether) in man: An alternative mode of action for DSCG in asthma?
1982
Hall Effect in VO 2 near the Semiconductor-to-Metal Transition
1973
Prostaglandin production in arthritis.
1978
Raman-scattering studies of implantation-amorphized gallium arsenide: Comparison to sputtered and evaporated a-GaAs films
1989
Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature
1969
Optical properties of semiconductors under hydrostatic pressure—II. Silicon
1958
Pressure Dependence of the Hall Constant of the Alkali Metals
1961
The inert gases Ar, Xe, and He as cryogenic pressure media
1990
Band Structure of the Intermetallic Semiconductors from Pressure Experiments
1961
Inflammatory characteristics of platelet activating factor (PAF-acether) in human skin
1984
Pressure Dependence of the Resistivity of Silicon
1955
Semiconductor-To-Metal Transitions in Transition-Metal Compounds
1967
Dielectric constant of germanium and silicon as a function of volume
1959
Piezoabsorption of Germanium Thin Films above the Fundamental Energy Gap
1968
Inflammatory cell accumulation in response to intracutaneous Paf-acether: a mediator of acute and persistent inflammation?
1985
The effect of pressure on the properties of germanium and silicon
1959
Pressure dependence of band offsets in InAs/Ga 1 − x In x Sb superlattices
1997
The present position of theory and experiment for VO2
1970
Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical Bond
1971
Picosecond Relaxation of Optically Induced Absorption in Amorphous Semiconductors
1979
Pressure dependence of the direct energy gap in germanium
1960
Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering
1976
Pressure dependence of the resistivity of zinc oxide
1960
The structure of amorphous Ge
1972
Amorphous Semiconductors Stimulate Fundamental and Applied Research
1969
The structure of tetrahedrally coordinated amorphous semiconductors
1973