Citation Impact
Citing Papers
Elastic and inelastic electron transport in metal–molecule(s)–metal junctions
2012
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Shot noise variation within ensembles of gold atomic break junctions at room temperature
2014
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Hepatocellular carcinoma
2018 Standout
A Randomized Trial Comparing Radiofrequency Ablation and Surgical Resection for HCC Conforming to the Milan Criteria
2010
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Hepatocellular carcinoma
2012 Standout
Statistical Analysis of Single‐Molecule Junctions
2004 StandoutNobel
Electrochemically Assisted Fabrication of Metal Atomic Wires and Molecular Junctions by MCBJ and STM‐BJ Methods
2010
Mie Resonances, Infrared Emission, and the Band Gap of InN
2004 StandoutNobel
Recent progress in understanding, diagnosing, and treating hepatocellular carcinoma
2012
Photoconductance and inverse photoconductance in films of functionalized metal nanoparticles
2009 StandoutNatureNobel
Growth and applications of Group III-nitrides
1998
Photoelectron spectroscopy of surface states on semiconductor surfaces
1988
Electronic decoupling of a cyclophane from a metal surface
2010 StandoutNobel
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
2011 StandoutNobel
Exploring the chemical enhancement for surface-enhanced Raman scattering with Au bowtie nanoantennas
2006 StandoutNobel
Quantum properties of atomic-sized conductors
2003
Graphene Cathode-Based ZnO Nanowire Hybrid Solar Cells
2012 StandoutNobel
Direct water photoelectrolysis with patterned n-GaN
2007 StandoutNobel
Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination
2004
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy
2002
Single-Molecule Junctions Based on Nitrile-Terminated Biphenyls: A Promising New Anchoring Group
2010 StandoutNobel
Scanning Probe Microscopy
1998
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
2001
Time-Dependent Single-Molecule Raman Scattering as a Probe of Surface Dynamics
2001
Improvement of Low-Intensity Ultraviolet Photodetectors Based on AlGaN with Low Threading Dislocation Density
1999 StandoutNobel
Silver Nanodisk Growth by Surface Plasmon Enhanced Photoreduction of Adsorbed [Ag+]
2003 StandoutNobel
Noble Metal Nanocrystals: Plasmon Electron Transfer Photochemistry and Single-Molecule Raman Spectroscopy
2008 StandoutNobel
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set
1996 Standout
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Molecular-Scale Electronics: From Concept to Function
2016 Standout
Electrochemical Ostwald Ripening of Colloidal Ag Particles on Conductive Substrates
2004 StandoutNobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Detailed feasibility study on a flame detector using AlGaN photosensors
2000 Nobel
High temperature nucleation and growth of GaN crystals from the vapor phase
2002 StandoutNobel
Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure
2003
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
2013 StandoutNobel
Epitaxial Lateral Overgrowth of GaN
2001
Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN
2001
Photoresponsivity of ultraviolet detectors based on InxAlyGa1−x−yN quaternary alloys
2000
Low-Intensity Ultraviolet Photodetectors Based on AlGaN
1999 StandoutNobel
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
2001 StandoutNobel
Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
2010 Science
Small band gap bowing in In1−xGaxN alloys
2002
Unusual properties of the fundamental band gap of InN
2002
Contact to single atoms and molecules with the tip of a scanning tunnelling microscope
2008
Evidence for Saturation of Channel Transmission from Conductance Fluctuations in Atomic-Size Point Contacts
1999 StandoutNobel
Investigation of the Leakage Current in GaN P-N Junctions
1998 StandoutNobel
GaN: Processing, defects, and devices
1999
Reactive Oxygen Species (ROS)-Based Nanomedicine
2019 Standout
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Energy band bowing parameter in AlxGa1−xN alloys
2002
Molecular Graph Paper
2017 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Linear Alkane Polymerization on a Gold Surface
2011 Science
Electrical Conductance of Conjugated Oligomers at the Single Molecule Level
2007 StandoutNobel
Determination of Band-Gap Bowing for AlxGa1-xN Alloys
2001
Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
2006
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
2007 StandoutNobel
Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates
2003
Quantum Suppression of Shot Noise in Atom-Size Metallic Contacts
1999
Dendrimers Designed for Functions: From Physical, Photophysical, and Supramolecular Properties to Applications in Sensing, Catalysis, Molecular Electronics, Photonics, and Nanomedicine
2010 Standout
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
1996 Standout
"Dip-Pen" Nanolithography
1999 StandoutScience
III–Nitride UV Devices
2005
Single molecule raman spectroscopy and local work function fluctuations
2004
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
2001
Total energies of diamond (111) surface reconstructions by a linear combination of atomic orbitals method
1984
Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer
2001 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of Wei Yang being referenced
Radiofrequency ablation of hepatocellular carcinoma: Long-term outcome and prognostic factors
2007
Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes
1999
Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
1998
UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
2000
Dynamics of anomalous optical transitions inAl x Ga 1 − x N
2000
Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise
1998
Single-crystal GaN pyramids grown on (111)Si substrates by selective lateral overgrowth
1999
Variation of the local work function at steps on metal surfaces studied with STM
1998
Physisorption-Induced Surface Reconstruction and Morphology Changes: Adsorption of Glycine on the Au(110) 1 × 2 Surface
2002
Observation of conductance quantization of ballistic metallic point contacts at room temperature
1996
Dependence of the fundamental band gap of AlxGa1−xN on alloy composition and pressure
1999
High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
1997
Missing spots in low-energy electron-diffraction patterns
1984
Stimulated emission in GaN thin films in the temperature range of 300–700 K
1999 StandoutNobel
Optical properties of GaN pyramids
1999
Room-temperature deep-ultraviolet-stimulated emission from AlxGa1−xN thin films grown on sapphire
1999
Optical properties of a high-quality insulating GaN epilayer
1999
High gain GaN/AlGaN heterojunction phototransistor
1998