Citation Impact
Citing Papers
Carrier-envelope phase stabilization of a multi-millijoule, regenerative-amplifier-based chirped-pulse smplifier dystem
2009 StandoutNobel
Platinum single-atom and cluster catalysis of the hydrogen evolution reaction
2016 Standout
Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages
2018 StandoutNatureNobel
Time–motion analysis and physiological data of elite under-19-year-old basketball players during competition
2006 Standout
Analysis of optical spectra by Fourier methods
1998
Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition
1993
Optical characterisation of semiconductor surfaces and interfaces
1995
Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum
1992
Growth mechanisms in atomic layer epitaxy of GaAs
1998
Atomic Layer Deposition Functionalized Composite SOFC Cathode La0.6Sr0.4Fe0.8Co0.2O3-δ -Gd0.2Ce0.8O1.9: Enhanced Long-Term Stability
2013 StandoutNobel
Study of strain and disorder of InxGa1−xP/(GaAs, graded GaP) (0.25≤x≤0.8) using spectroscopic ellipsometry and Raman spectroscopy
1994
Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis
1995
Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry
1998
Growth of GaN and Al0.2Ga0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy
1997 StandoutNobel
Silicon shadow mask MOVPE for in-plane thickness control of structures
1997
Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy
1993
Nano-optics of surface plasmon polaritons
2005 Standout
Atomic Layer Deposition: An Overview
2009 Standout
Real-Time monitoring of III-V molecular beam epitaxial growth using spectroscopic ellipsometry
1995
A reflectance anisotropy spectroscopy study of GaSb(100)c(2 × 6) surfaces prepared by Sb decapping
1996 StandoutNobel
Measurement of theIn 0.52 Al 0.48 In 0.52 Al 0.48
1995
Monolayer thickness in atomic layer deposition
1996
Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
1999
Evidences of non-commutativity and non-transitivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures
1993
The evolution of ‘sol–gel’ chemistry as a technique for materials synthesis
2015 Standout
Optical characterization of wide bandgap semiconductors
2000 StandoutNobel
InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD
1993
Characterization of adsorption in flow type atomic layer epitaxy reactor
1994
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Unconventional Methods for Fabricating and Patterning Nanostructures
1999 Standout
Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
1994
Photoluminescence and band offsets of AlInAs/InP
1995
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Photoluminescence study of the interface in type II InAlAs–InP heterostructures
1998
Electronic Structure of 1 to 2 nm Diameter Silicon Core/Shell Nanocrystals: Surface Chemistry, Optical Spectra, Charge Transfer, and Doping
2003 StandoutNobel
Defects in porous silicon investigated by optically detected and by electron paramagnetic resonance techniques
1993
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
2001 StandoutNobel
Engineering InAsxP1-x/InP/ZnSe III−V Alloyed Core/Shell Quantum Dots for the Near-Infrared
2005 StandoutNobel
Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry
1996
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
1995 StandoutNobel
Optical properties of metallic films for vertical-cavity optoelectronic devices
1998 Standout
Selective Growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy
1996 StandoutNobel
Invited review ?sol-gel? preparation of high temperature superconducting oxides
1996
Trends in residual stress for GaN/AlN/6H–SiC heterostructures
1998 StandoutNobel
Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements
1993
Monitoring of atomic layer deposition by incremental dielectric reflection
1996
Modeling the optical dielectric function of the alloy systemAl x Ga 1 − x
1993
In situ determination of free-carrier concentrations by reflectance difference spectroscopy
1991
Works of W. E. Quinn being referenced
Optical control of growth of AlxGa1−xAs by organometallic molecular beam epitaxy
1990
Real-time optical diagnostics for epitaxial growth
1991
Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth
1991
Optically monitoring and controlling epitaxial growth
1992
Real-time optical diagnostics for measuring and controlling epitaxial growth
1993
Application of ellipsometry to crystal growth by organometallic molecular beam epitaxy
1990
Dielectric and high Tc superconductor applications of sol-gel and modified sol-gel processing to microelectronics technology
1990
Growth of AlxGa1−xAs parabolic quantum wells by real-time feedback control of composition
1992
Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy
1992
In situ definition of semiconductor structures by selective area growth and etching
1991
Optical transitions and chemistry at the In0.52Al0.48As/InP interface
1992
The optically detected magnetic resonance of dangling bonds at the Si/SiO2 interface
1986