Citation Impact

Citing Papers

A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Luminescent probes and sensors for temperature
2013 Standout
Resonantly enhanced selective photochemical etching of GaN
2009
Optical signatures of dopants in GaN
2006 StandoutNobel
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Maskless pendeo-epitaxial growth of GaN films
2002 StandoutNobel
NonpolarInxGa1−xN/GaN(11¯00)multiple quantum wells grown onγ−LiAlO2(100)by plasma-assisted molecular-beam epitaxy
2003
Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures
2001
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
2001
Electron localization by a donor in the vicinity of a basal stacking fault in GaN
2009
Transient photoluminescence of shallow donor bound excitons in GaN
2010
Luminescence properties of defects in GaN
2005 Standout
Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
2011
Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors
2010
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements
2005
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
Etch rate and surface morphology control in photoelectrochemical etching of GaN
2004
Homo-epitaxial growth on misoriented GaN substrates by MOCVD
2000
Optical characterization of III-nitrides
2002 StandoutNobel
Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition
2005
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
2008 StandoutNobel
Crystal growth of gallium nitride in supercritical ammonia
2001
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
High temperature nucleation and growth of GaN crystals from the vapor phase
2002 StandoutNobel
Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
1999 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN
2001
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence
2002 StandoutNobel
Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate
2007
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
2002 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Excellent crystallinity of truly bulk ammonothermal GaN
2008
Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes
2008 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
Group III-nitride based hetero and quantum structures
2000
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Spectral Electroluminescence Mapping of a Blue InGaN Single Quantum Well Light-Emitting Diode
2000 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Freestanding GaN‐substrates and devices
2003
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures
2006
Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density freestanding GaN substrates
2008
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Free excitons in wurtzite GaN
2001
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
The dominant shallow 0.225 eV acceptor in GaN
2006
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
2007 StandoutNobel
Defect Reduction in HVPE Growth of GaN and Related Optical Spectra
2001
Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction
2007
Polarized photoluminescence study of free and bound excitons in free-standingGaN
2004
Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation
2000
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
Recombination of free and bound excitons in GaN
2008
Band parameters for nitrogen-containing semiconductors
2003 Standout
Optical micro‐characterization of group‐III‐nitrides: correlation of structural, electronic and optical properties
2003
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
2013 StandoutNobel
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Substrates for gallium nitride epitaxy
2002
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel

Works of V. Schwegler being referenced

High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers
1999
Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology
1999
Dry etching of GaN substrates for high-quality homoepitaxy
1999
Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions
2000
MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices
2000
Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
1999
Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN
1999
Scanning Electroluminescence Microscopy: A Powerful Novel Characterization Tool for Light Emitting Diodes
1999
Extraction Efficiency of GaN-Based LEDs
2001
Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy
1999
GaN Homoepitaxy for Device Applications
1999
Spatially Resolved Imaging of the Spectral Emission Characteristic of an InGaN/GaN-Multi Quantum Well- Light-Emitting Diode by Scanning Electroluminescence Microscopy
2000
High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers
1999
Blue light-emitting diodes on GaN substrates, growth and characterization
1998
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