Citation Impact
Citing Papers
Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7)
2004
AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
2012
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates
2011
Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
2012
Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate
2007 StandoutNobel
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes
2007 StandoutNobel
High hole concentration in Mg-doped AlN/AlGaN superlattices with high Al content
2018
Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes
2004 StandoutNobel
Advances in group III-nitride-based deep UV light-emitting diode technology
2010 Standout
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
2005 StandoutNobel
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
2006 StandoutNobel
Anisotropically Biaxial Strain in a-Plane AlGaN on GaN Grown on r-Plane Sapphire
2006 StandoutNobel
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2005
Optimization of Device Structures for Bright Blue Semipolar (1011) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition
2010 StandoutNobel
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
2009 StandoutNobel
Effect of Substrate Miscut on the Direct Growth of Semipolar (10-1-1) GaN on (100) MgAl2O4 by Metalorganic Chemical Vapor Deposition
2006 StandoutNobel
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
2010 StandoutNobel
200 nm deep ultraviolet photodetectors based on AlN
2006
High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer
2009 StandoutNobel
Epitaxial lateral overgrowth of AlxGa1−xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices
2006 StandoutNobel
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
2003
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
2007 StandoutNobel
Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
2010
30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
2010 StandoutNobel
AlGaN Deep-Ultraviolet Light-Emitting Diodes
2005
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
2008 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
2004
High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
2008 StandoutNobel
Investigation of Mg doping in high-Al content p-type AlxGa1−xN (0.3<x<0.5)
2005
Depolarization effects in (112¯2)-oriented InGaN∕GaN quantum well structures
2007
Nitride deep-ultraviolet light-emitting diodes with microlens array
2005
Flat (1120) GaN Thin Film on Precisely Offset-Controlled (1102) Sapphire Substrate
2005 StandoutNobel
222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire
2009
Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2010 StandoutNobel
Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates
2007 StandoutNobel
Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates
2006
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Realization of high hole concentrations in Mg doped semipolar (101¯1¯) GaN
2006 StandoutNobel
Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
2011 StandoutNobel
231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
2007
Characterization of blue-green m-plane InGaN light emitting diodes
2009 StandoutNobel
High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates
2004
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes
2006
Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN
2004
Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature
2006 StandoutNobel
Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes
2014
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates
2008 StandoutNobel
Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
2017
292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
2003 StandoutNobel
Development and prospects of nitride materials and devices with nonpolar surfaces
2008
Fabrication and characterization of native non-polar GaN substrates
2008
Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition
2007
A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
2018
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
2013
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition
2007 StandoutNobel
High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate
2007 StandoutNobel
High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
2007 StandoutNobel
Prospects for LED lighting
2009 StandoutNobel
Electronic and Optical Properties of ${\rm a}$- and ${\rm m}$-Plane Wurtzite InGaN–GaN Quantum Wells
2007
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
2011 StandoutNobel
High p-type conduction in high-Al content Mg-doped AlGaN
2013
Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH_3 interrupted etching
2014 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Ultraviolet semiconductor laser diodes on bulk AlN
2007
Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
2009 StandoutNobel
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2007 StandoutNobel
III–Nitride UV Devices
2005
High‐quality nonpolar m ‐plane GaN substrates grown by HVPE
2008
Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals
2006
Novel UV devices on high-quality AlGaN using grooved underlying layer
2009 StandoutNobel
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates
2006
Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
2005
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays
2013
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy
2005 StandoutNobel
Ultraviolet light-emitting diodes based on group three nitrides
2008
High power and high efficiency green light emitting diode on free‐standing semipolar (11$ \bar 2 $2) bulk GaN substrate
2007 StandoutNobel
Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
2013 StandoutNobel
Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
2006 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of V. Mandavilli being referenced
Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm
2003
AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission
2003
Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
2002
Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes
2003
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
2004
High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design
2004
Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
2002
Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates
2002
AlGaN -based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW
2004
AlGaN single-quantum-well light-emitting diodes with emission at 285 nm
2002
High DC power 325 nm emission deep UV LEDs over sapphire
2002
Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
2004
Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm
2002