Citation Impact
Citing Papers
Superconducting nano-mechanical diamond resonators
2014
Conductivity in transparent oxide semiconductors
2011
Progress in the materials science of silicene
2014
Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
2014 StandoutNobel
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Size-Dependent Thermal Stability and Optical Properties of Ultra-Small Nanodiamonds Synthesized under High Pressure
2022 StandoutNobel
Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition
2008
Nitride‐based hetero‐field‐effect‐transistor‐type photosensors with extremely high photosensitivity
2013 Nobel
Size Effects on Surface Chemistry and Raman Spectra of Sub-5 nm Oxidized High-Pressure High-Temperature and Detonation Nanodiamonds
2021
Development of AlN/diamond heterojunction field effect transistors
2012 StandoutNobel
Purely Organic Thermally Activated Delayed Fluorescence Materials for Organic Light‐Emitting Diodes
2017 Standout
Terahertz Spectroscopy
2011
Nanoscale metal oxide-based heterojunctions for gas sensing: A review
2014 Standout
A review of Ga2O3 materials, processing, and devices
2018 Standout
Synthesis of superconducting boron-doped diamond compacts with high elastic moduli and thermal stability
2014 StandoutNobel
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
Nanocrystalline diamond
2011
The progress of AlN bulk growth and epitaxy for electronic applications
2009
Semiconductor Junction Gas Sensors
2008
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates
2006
Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
2013 StandoutNobel
Structural and interface properties of an AlN diamond ultraviolet light emitting diode
2004
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering
2006
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes
2014 StandoutNobel
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds
2017
Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
2012
Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN
2011 Nobel
Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
2013 StandoutNobel
Recent development of two-dimensional transition metal dichalcogenides and their applications
2017 Standout
Molecular orientation in small-molecule organic light-emitting diodes
2011
Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE
2007 StandoutNobel
Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy
2010
Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
2008 StandoutNobel
Nanocrystalline Metal Oxides for Methane Sensors: Role of Noble Metals
2009
Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
2013 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Degradation effects of the active region in UV-C light-emitting diodes
2018
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
2011 StandoutNobel
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
2013 StandoutNobel
Broad Family of Carbon Nanoallotropes: Classification, Chemistry, and Applications of Fullerenes, Carbon Dots, Nanotubes, Graphene, Nanodiamonds, and Combined Superstructures
2015 Standout
Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy
2009 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
When group-III nitrides go infrared: New properties and perspectives
2009
Advanced Nanoarchitectures for Solar Photocatalytic Applications
2011 Standout
III–Nitride UV Devices
2005
Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes
2009
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Nanostructured Materials for Room‐Temperature Gas Sensors
2015 Standout
Auger recombination in GaInN/GaN quantum well laser structures
2011
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Nanodiamond Size from Low-Frequency Acoustic Raman Modes
2022 StandoutNobel
Stable vicinal step orientations in m-plane GaN
2014 StandoutNobel
High quality heteroepitaxial AlN films on diamond
2004
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
2008
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
2008
Resonant and nonresonant control over matter and light by intense terahertz transients
2013 Standout
Substrates for gallium nitride epitaxy
2002
Works of V. Lebedev being referenced
Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films
2012
Wet chemical etching of AlN in KOH solution
2006
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
2006
Static and dynamic determination of the mechanical properties of nanocrystalline diamond micromachined structures
2009
Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer
2007
Highly efficient THz emission from differently grown InN at 800nm and 1060nm excitation
2008
Hexagonal AlN films grown on nominal and off-axis Si(001) substrates
2001
Polytype control and properties of AlN on silicon
2005
Experimental evidence of different hydrogen donors inn
2008
Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry
2003
Epitaxial relationship in the AlN/Si(001) heterosystem
2000
Coalescence aspects of III-nitride epitaxy
2007
Space charge limited electron transport in AlGaN photoconductors
2007
The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
2005
Ultra‐thin InGaN photodetectors for standing wave interferometry
2008
Morphology and surface electronic structure of MBE grown InN
2007
Investigation of the Structure of 2H-AlN Films on Si(001) Substrates
2001
Pt/GaN Schottky diodes for hydrogen gas sensors
2005
Gap state absorption in AlGaN photoconductors and solar‐blind photodetectors
2004
Model for the thickness dependence of electron concentration in InN films
2006
Appropriate Salt Concentration of Nanodiamond Colloids for Electrostatic Self-Assembly Seeding of Monosized Individual Diamond Nanoparticles on Silicon Dioxide Surfaces
2015