Immediate Impact

3 standout
Sub-graph 1 of 2

Citing Papers

Transistors based on two-dimensional materials for future integrated circuits
2021 Standout
Insulators for 2D nanoelectronics: the gap to bridge
2020 Standout
3 intermediate papers

Works of V. D. Maheta being referenced

Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs
2009
Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) I<inf>DLIN</inf> Technique
2007

Author Peers

Author Last Decade Papers Cites
V. D. Maheta 158 9 15 13 159
Thomas W. Brown 104 4 11 12 122
Kai-Bin Wu 93 4 9 9 94
Siyoung Choi 82 3 13 11 88
Nobutaka Kidera 177 7 4 8 187
Young Suh Song 183 2 19 22 187
Sangmin Han 219 2 59 13 223
Stéphane Pinel 152 9 8 15 165
Philippe Grosclaude 124 2 4 18 187
Kalyan Biswas 122 10 10 16 141
C. Perrot 94 5 35 9 119

All Works

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Rankless by CCL
2026