Torsten Langer

Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells

Group III-nitride lasers: a materials perspective

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes

Origin of the “green gap”: Increasing nonradiative recombination in indium‐rich GaInN/GaN quantum well structures

Room temperature excitonic recombination in GaInN/GaN quantum wells