Standout Papers

Optical characterisation of GaN and related materials 1994 2026 2004 2015 54
  1. Optical characterisation of GaN and related materials (1997)
    B. Ḿonemar, J. P. Bergman et al. Solid-State Electronics
  2. Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates (1994)
    Theeradetch Detchprohm, K. Hiramatsu et al. Journal of Crystal Growth
  3. Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals (2001)
    Theeradetch Detchprohm, Tetsuya Nakamura et al. Japanese Journal of Applied Physics
  4. Demonstration of Flame Detection in Room Light Background by Solar-Blind AlGaN PIN Photodiode (2001)
    Akira Hirano, Cyril Pernot et al. physica status solidi (a)
  5. Dynamical study of the yellow luminescence band in GaN (1997)
    A. Hoffmann, L. Eckey et al. Solid-State Electronics
  6. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer (1992)
    Theeradetch Detchprohm, K. Hiramatsu et al. Applied Physics Letters
  7. Shallow donors in GaN—The binding energy and the electron effective mass (1995)
    B. K. Meyer, D. Volm et al. Solid State Communications
  8. Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer (2001)
    Akira Hirano, Motoaki Iwaya et al. Japanese Journal of Applied Physics
  9. Magneto-optical investigation of the neutral donor bound exciton in GaN (1995)
    D. Volm, B. K. Meyer et al. Solid State Communications
  10. Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN (1995)
    L. Eckey, A. Hoffmann et al. MRS Proceedings
  11. Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers (1994)
    J. Baur, K. Maier et al. Applied Physics Letters
  12. Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown on Periodically Grooved Substrates (2001)
    Theeradetch Detchprohm, Satoshi Kamiyama et al. physica status solidi (a)
  13. Reduction of threading dislocation density in AlXGa1−XN grown on periodically grooved substrates (2002)
    Theeradetch Detchprohm, Tetsuya Nakamura et al. Journal of Crystal Growth
  14. Exciton fine structure in undoped GaN epitaxial films (1996)
    D. Volm, D. Kovalev et al. Physical review. B, Condensed matter
  15. The excitonic bandgap of GaN: Dependence on substrate (1997)
    B. Ḿonemar, J. P. Bergman et al. Solid-State Electronics
  16. Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes (2000)
    Cyril Pernot, Akira Hirano et al. Japanese Journal of Applied Physics
  17. Improvement of Low-Intensity Ultraviolet Photodetectors Based on AlGaN with Low Threading Dislocation Density (1999)
    Cyril Pernot, Akira Hirano et al. physica status solidi (a)
  18. Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface (1996)
    H. Siegle, P. Thurian et al. Applied Physics Letters
  19. Improvement of far-field pattern in nitride laser diodes (1999)
    Tetsuya Takeuchi, Theeradetch Detchprohm et al. Applied Physics Letters
  20. The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates (1994)
    Theeradetch Detchprohm, K. Hiramatsu et al. Journal of Crystal Growth
  21. Low-Intensity Ultraviolet Photodetectors Based on AlGaN (1999)
    Cyril Pernot, Akira Hirano et al. Japanese Journal of Applied Physics
  22. Photoluminescence and optical gain in highly excited GaN (1997)
    L. Eckey, J. Holst et al. Journal of Luminescence
  23. Low-dislocation-density GaN and AlxGa1−xN (x⩽0.13) grown on grooved substrates (2002)
    Theeradetch Detchprohm, Satoshi Kamiyama et al. Journal of Crystal Growth
  24. Charactrization of Residual Transition Metal Ions in GaN and AIN (1995)
    John E. Baur, M. Kunzer et al. Materials science forum
  25. Photoluminescence of residual transition metal impurities in GaN (1995)
    J. Baur, U. Kaufmann et al. Applied Physics Letters
  26. The growth of thick GaN film on sapphire substrate by using ZnO buffer layer (1993)
    Theeradetch Detchprohm, Hiroshi Amano et al. Journal of Crystal Growth
  27. Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN (1995)
    M. Drechsler, D.M. Hofmann et al. Japanese Journal of Applied Physics

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Free and bound excitons in thin wurtzite GaN layers on sapphire
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Defect-related optical transitions in GaN
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Atomic structure of pyramidal defects in Mg-doped GaN
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Dissociation of H-related defect complexes in Mg-doped GaN
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Ionized donor bound excitons in GaN
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Properties of a hole trap in n-type hexagonal GaN
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Yellow luminescence and related deep levels in unintentionally doped GaN films
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Empirical tight-binding calculation of the branch-point energy of the continuum of interface-induced gap states
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Works of Theeradetch Detchprohm being referenced

Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals
2001 StandoutNobel
Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
1994 StandoutNobel
Optical characterisation of GaN and related materials
1997 StandoutNobel
Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface
1996 StandoutNobel
Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates
1994 StandoutNobel
Study of Mg Associated Levels in GaN
1997
Depth Profile of the Excitonic Luminescence in Gallium-Nitride Layers
1996
Highly Polarized Green Light Emitting Diode inm-Axis GaInN/GaN
2010
Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN
1995 StandoutNobel
Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
2000 StandoutNobel
Improvement of Low-Intensity Ultraviolet Photodetectors Based on AlGaN with Low Threading Dislocation Density
1999 StandoutNobel
Dynamical study of the yellow luminescence band in GaN
1997 StandoutNobel
Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN
1995 StandoutNobel
Light-emitting diode development on polar and non-polar GaN substrates
2008
Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes
2010
The barrier height and interface effect of Au-n-GaN Schottky diode
1995
Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates
2008
Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
2010
Low-Intensity Ultraviolet Photodetectors Based on AlGaN
1999 StandoutNobel
Photon modulated electroluminescence of GaInN/GaN multiple quantum well light emitting diodes
2008
Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
1992
Shallow donors in GaN: A magnetic double resonance investigation
1996
Analysis of deep levels in n-type GaN by transient capacitance methods
1994
Exciton fine structure in undoped GaN epitaxial films
1996 StandoutNobel
Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy
1993
Green light emitting diodes on a-plane GaN bulk substrates
2008
Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes
2010
The Effective Mass Donor in Galliumnitride
1995
Magneto-optical investigation of the neutral donor bound exciton in GaN
1995 StandoutNobel
Charactrization of Residual Transition Metal Ions in GaN and AIN
1995 StandoutNobel
The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates
1994 StandoutNobel
Characterization of mid-gap states in HVPE and MOVPE-grown n-type GaN
1998
Deep levels in the upper band-gap region of lightly Mg-doped GaN
1996
Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
1996
Photoluminescence of residual transition metal impurities in GaN
1995 StandoutNobel
Shallow donors in GaN—The binding energy and the electron effective mass
1995 StandoutNobel
Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
1993
The growth of thick GaN film on sapphire substrate by using ZnO buffer layer
1993 StandoutNobel
Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
1992 StandoutNobel
Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices
2000 Nobel
Electrical Transport Properties of p-GaN
1996
Ga In N ∕ Ga N growth optimization for high-power green light-emitting diodes
2004
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