Citation Impact
Citing Papers
Lateral mode analysis of buried heterostructure diode lasers by the finite-element method
1986 StandoutNobel
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
Scanning near-field optical microscope with a laser diode and nanometer-sized bit recording
1996
Coherent bisection of optical frequency intervals as large as 530 THz
1992 StandoutNobel
High-power InGaN-based blue laser diodes with a long lifetime
1998 StandoutNobel
MOVPE growth of GaN on a misoriented sapphire substrate
1991 StandoutNobel
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
2006 StandoutNobel
Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates
1988 StandoutNobel
Longitudinal Mode Competition and Asymmetric Gain Saturation in Semiconductor Injection Lasers. I. Experiment
1988
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
A lateral microscopic growth model for heterogeneous impurity incorporation during Czochralski crystal growth
1980
Proposal on Reducing the Damping Constant in Semiconductor Lasers by Using Quantum Well Structures
1989
Scanning tunneling microscopy
1983 StandoutNobel
The structural and luminescence properties of porous silicon
1997 Standout
InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
1999 StandoutNobel
Rotational slip in III-V heterostructures grown by molecular-beam epitaxy
1988 StandoutNobel
Dimensionality of excitons in laser-diode structures composed ofIn x Ga 1 − x N
1999 StandoutNobel
Atomically flat LPE-grown facets seen by scanning tunneling microscopy
1982 StandoutNobel
LPE of buried heterostructure laser devices
1986
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
1997 StandoutNobel
Diarylethenes for Memories and Switches
2000 Standout
Measurement of Parity Nonconservation and an Anapole Moment in Cesium
1997 StandoutScienceNobel
InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices
1998 StandoutNobel
Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
2006 StandoutNobel
Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
1989 StandoutNobel
X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers
1978
InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours
1998 StandoutNobel
Electrical and optical properties of high purity In0.5Ga0.5P grown on GaAs by liquid phase epitaxy
1986
A new density matrix theory for semiconductor lasers, including non-Markovian intraband relaxation and its application to nonlinear gain
1991 StandoutNobel
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers
1993
GaAs-Al<inf>x</inf>Ga<inf>1-x</inf>As strip buried heterostructure lasers
1979
Materials issues for InGaN-based lasers
1998 StandoutNobel
Blue light emitting laser diodes
1999 StandoutNobel
Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers
1998 StandoutNobel
Studies of LPE ripple based on morphological stability theory
1978
Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
1998 StandoutNobel
Cavity optomechanics
2014 Standout
Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
2000 StandoutNobel
Frequency stabilization of a diode laser using simultaneous optical feedback from a diffraction grating and a narrowband Fabry–Perot cavity
1991 StandoutNobel
Transition to faceting in multilayer liquid phase epitaxy of GaAs
1980
InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
1998 StandoutNobel
A low-noise high-speed diode laser current controller
1993 StandoutNobel
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
2013 StandoutNobel
Quantum well lasers--Gain, spectra, dynamics
1986
Using diode lasers for atomic physics
1991 StandoutNobel
Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy
1998 StandoutNobel
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Field effect on thermal emission from the 0.40 eV electron level in InGaP
1993 StandoutNobel
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
1998 StandoutNobel
Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect
1998 StandoutNobel
InGaN-based blue light-emitting diodes and laser diodes
1999 StandoutNobel
Key inventions in the history of nitride-based blue LED and LD
2007 StandoutNobel
The effects of impurities and cooling rates on the surface morphology of LPE grown InP
1982
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
1990 Standout
Microwave photonics combines two worlds
2007 Standout
InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
1998 StandoutNobel
Resonance frequency, damping, and differential gain in 1.5 mu m multiple quantum-well lasers
1992
Second harmonic generation at 972 nm using a distributed Bragg reflection semiconductor laser
1992 StandoutNobel
Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3
1990 StandoutNobel
LPE Growth and Surface Morphology of InxGa1-xAsyP1-y (y≤0.01) on (100) GaAs
1984 StandoutNobel
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
1998 StandoutNobel
Cathodoluminescence Properties of Undoped and Zn-Doped AlxGa1-xN Grown by Metalorganic Vapor Phase Epitaxy
1991 StandoutNobel
Dependence of high-speed properties on the number of quantum wells in 1.55 mu m InGaAs-InGaAsP MQW lambda /4-shifted DFB lasers
1993
Low operating current self-sustained pulsation GaAlAs laser diodes with a real refractive index guided structure
1994
Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction
1984
Works of T. Kajimura being referenced
High-power visible GaAlAs lasers with self-aligned strip buried heterostructure
1984
Nonradiative dark regions along surface ripples in GaP LPE layers
1977
Reliability of 780-nm High-Power Laser Diodes with Thin Quantum Well Active Layer
1991
Mode-hopping noise in index-guided semiconductor lasers and its reduction by saturable absorbers
1985
High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
1985
Lattice mismatch at the interface in GaP-GaP and GaAIAs-GaAs epitaxial growth
1974
Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer
1989
Low-noise AlGaAs lasers grown by organometallic vapor phase epitaxy
1989
Stable operation of buried-heterostructure Ga1−xAlxAs lasers during accelerated aging
1978
Degradation mechanisms of Ga1−xAlxAs visible diode lasers
1980