T. Daibou

Toward an AI Era: Advances in Electronic Skins

Predictable Gate-Field Control of Spin in Altermagnets with Spin-Layer Coupling

$1\times$ - to $2\times$ -nm perpendicular MTJ Switching at Sub-3-ns Pulses Below $100~\mu$ A for High-Performance Embedded STT-MRAM for Sub-20-nm CMOS

Analyses of intrinsic magnetoelectric properties in spin-valve-type tunnel junctions with high magnetoresistance and low resistance