Citation Impact

Citing Papers

Electronics based on two-dimensional materials
2014 Standout
SQUID detected NMR and NQR
1998 StandoutNobel
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
2004 StandoutNature
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
2009 Standout
Nuclear quadrupole resonance detected at 30 MHz with a dc superconducting quantum interference device
1985 StandoutNobel
Enabling nanotechnology with self assembled block copolymer patterns
2003 Standout
Josephson Coupled Quantum Dot Artificial Solids
2000
CMOS scaling for high performance and low power-the next ten years
1995
Source—Drain contact resistance in CMOS with self-aligned TiSi2
1987
Surface chemistry of colloidal gold: Deposition and reoxidation of Pb, Cd, and Tl
1994
X-ray nanolithography: Extension to the limits of the lithographic process
1996
On the narrow-emitter effect of advanced shallow-profile bipolar transistors
1988
3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
2001 Standout
Nuclear magnetic resonance with DC SQUID preamplifiers
1989 StandoutNobel
High-sensitivity magnetic resonance by SQUID detection
1979
Surface Plasmon Spectroscopy of Nanosized Metal Particles
1996 Standout
73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
1992
Fundamentals of Modern VLSI Devices
2009 Standout
A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's
1986

Works of T. Bucelot being referenced

A highly latchup-immune 1-µm CMOS technology fabricated with 1-MeV ion implantation and self-aligned TiSi2
1986
Degradation of bipolar transistors under high current stress at 300 K
1988
Superconducting lead particles produced by chemical techniques
1982
Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs
1993
SQUIDs for measuring the magnetic properties of materials
1978
Fabrication of high performance 512K static-random access memories in 0.25 μm complementary metal–oxide semiconductor technology using x-ray lithography
1993
Rankless by CCL
2026