Standout Papers

A fast, high-endurance and scalable non-volatile memory device ma... 2004 2026 2011 2018 1.7k
  1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures (2011)
    Myoung‐Jae Lee, Chang Bum Lee et al. Nature Materials
  2. Reproducible resistance switching in polycrystalline NiO films (2004)
    Sunae Seo, Myoung‐Jae Lee et al. Applied Physics Letters
  3. Electrical observations of filamentary conductions for the resistive memory switching in NiO films (2006)
    Sunae Seo, Seung‐Eon Ahn et al. Applied Physics Letters

Immediate Impact

2 by Nobel laureates 16 from Science/Nature 107 standout
Sub-graph 1 of 12

Citing Papers

Self-Rectifying All-Optical Modulated Optoelectronic Multistates Memristor Crossbar Array for Neuromorphic Computing
2024 Standout
Memristor‐Based Neuromorphic Chips
2024 Standout
93 intermediate papers

Works of Sunae Seo being referenced

Electrical observations of filamentary conductions for the resistive memory switching in NiO films
2006 Standout
Reproducible resistance switching in polycrystalline NiO films
2004 Standout
and 20 more

Author Peers

Author Last Decade Papers Cites
Sunae Seo 5532 2903 1990 90 6.5k
David H. Seo 4533 2555 1582 39 5.4k
Myoung‐Jae Lee 8194 3264 2982 147 9.1k
Mario Lanza 5832 3795 952 196 8.0k
Gunuk Wang 4160 1631 1347 110 5.1k
Jang‐Sik Lee 6699 2587 2277 159 7.7k
Doo Seok Jeong 5481 2078 1347 122 6.0k
Byung Joon Choi 4972 1807 1432 144 5.4k
Gyeong‐Su Park 3541 2044 1038 69 4.7k
Shi‐Jin Ding 5483 3597 1250 263 6.9k
Vinod K. Sangwan 6487 6375 1724 105 9.7k

All Works

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2026