Citation Impact

1 from Science/Nature 8 standout
Sub-graph 1 of 4

Citing Papers

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
2021 Standout
GaN-based power devices: Physics, reliability, and perspectives
2021 Standout
2 intermediate papers

Works of S.M. Jang being referenced

Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs
2001
A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides
2000

Author Peers

Author EEE EOMM Biomedical Engineering Materials Chemistry Last Decade Papers Cites
S.M. Jang 114 10 19 18 20 128
C. A. Gagiano 1 18 372
Francisco Curado Teixeira 42 1 18 265
William Barnhill 131 9 39 113 7 610
S. Archer 9 11 301
Antonio Hernandez Conte 4 1 39 30 82 1.1k

All Works

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2026