Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas
2016 StandoutNobel
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Synthesis of Monodisperse Spherical Nanocrystals
2007 Standout
Silicon Micro‐ and Nanofabrication for Medicine
2013
Semiconductor Nanowires: From Self‐Organization to Patterned Growth
2006
Supported gold nanoparticles as catalysts for organic reactions
2008 Standout
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)
2000
Free-Standing Kinked Silicon Nanowires for Probing Inter- and Intracellular Force Dynamics
2015 StandoutNobel
Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
2008 StandoutNobel
10-W/mm AlGaN-GaN HFET with a field modulating plate
2003
GaN-Based RF Power Devices and Amplifiers
2008 Standout
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Characterization of an AlGaN/GaN two-dimensional electron gas structure
2000
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications
2011 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Transport phenomena in nanofluidics
2008 Standout
Shubnikov de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well
2002
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Optimization of AlGaN∕GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching
2004
GaN blue photonic crystal membrane nanocavities
2005 StandoutNobel
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors
2000
Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
2013 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
2006 StandoutNobel
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction
2001
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2000
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
2004 StandoutNobel
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Enhancement mode AlGaN/GaN HFET with selectivelygrown pn junction gate
2000
Thermoelectric effects in wurtzite GaN and AlxGa1−xN alloys
2005
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
1999
Temperature Dependence of the Phonons of Bulk AlN
2000
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
A new strategy to incorporate highly dispersed nanoparticles into the pore channels of mesoporous silica thin films
2004
Thermal conduction in AlxGa1−xN alloys and thin films
2005
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
High temperature thermoelectric properties of optimized InGaN
2011 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
2000
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy
2000
Electron mobility in graded AlGaN alloys
2006
Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
2000
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
2014 StandoutNobel
A Survey of Wide Bandgap Power Semiconductor Devices
2013 Standout
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time
2000
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Works of S.J. Cai being referenced
High breakdown voltage GaN HFET with field plate
2001
Growth of Si whiskers on Au/Si(111) substrate by gas source molecular beam epitaxy (MBE)
1999
High performance AlGaN/GaN HEMT with improved Ohmiccontacts
1998
Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors
1999
Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures
1998
An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz
1999
Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate
1998