Seigo Ohno

Optical vortices 30 years on: OAM manipulation from topological charge to multiple singularities

Local Polar Fluctuations in Lead Halide Perovskite Crystals

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

High dielectric constant oxides

Azo-polymer film twisted to form a helical surface relief by illumination with a circularly polarized Gaussian beam

Organic Airborne Molecular Contamination in Semiconductor Fabrication Clean Rooms

Synthesis and Optimum Luminescence of CaWO₄-Based Red Phosphors with Codoping of Eu³⁺and Na⁺

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

SOFT LITHOGRAPHY

High dielectric constant gate oxides for metal oxide Si transistors

Low dielectric constant materials for microelectronics

Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate

Polymeric silicon‐containing resist materials

Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides

Wavelength-versatile optical vortex lasers

Long persistent phosphors—from fundamentals to applications

Growth and characterization of ultrathin nitrided silicon oxide films

Radiation Effects in MOS Oxides

Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides

Elastic softening and central peaks in BaTiO3 single crystals above the cubic-tetragonal phase-transition temperature

Constructive spin-orbital angular momentum coupling can twist materials to create spiral structures in optical vortex illumination

Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films

New trilevel and bilevel resist systems using silyl ethers of novolak and low molecular weight resist

New, deep UV resist (LMR) for lift-off technique

Characterization of SiO2/Si(100) interface structure of N2O-oxynitrided ultrathin SiO2 films

Thin-gate SiO/sub 2/ films formed by in situ multiple rapid thermal processing

Highly Reliable Thin Nitrided SiO₂ Films Formed by Rapid Thermal Processing in an N₂O Ambient

Temperature dependence of the Brillouin frequency shift in crystals