S.C. Rustagi

Tunnel field-effect transistors as energy-efficient electronic switches

Nanowire transistors without junctions

Electronics based on two-dimensional materials

Small-sized silicon nanoparticles: new nanolights and nanocatalysts

Synthesis and Modification of Silicon Nanosheets and Other Silicon Nanomaterials

Click Chemistry Mediated Functionalization of Vertical Nanowires for Biological Applications

Impacts of doping on thermal and thermoelectric properties of nanomaterials

Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties

Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

A Unified Analytic Drain–Current Model for Multiple-Gate MOSFETs

Theoretical investigation of silicon nanowires: Methodology, geometry, surface modification, and electrical conductivity using a multiscale approach

Carbon nanodots: synthesis, properties and applications

MoS₂transistors with 1-nanometer gate lengths

Vertical Si-Nanowire <formula formulatype="inline"><tex Notation="TeX">$n$</tex></formula>-Type Tunneling FETs With Low Subthreshold Swing (<formula formulatype="inline"><tex Notation="TeX">$\leq \hbox{50}\ \hbox{mV/decade}$</tex> </formula>) at Room Temperature

Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC

Advanced Thermoelectric Design: From Materials and Structures to Devices

HfO_x-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

Graphene-Like Two-Dimensional Materials

Transport phenomena in nanofluidics

Toward Nanowire Electronics

Effective Surface Passivation by Novel $\hbox{SiH}_{4}$ –$\hbox{NH}_{3}$ Treatment and BTI Characteristics on Interface-Engineered High-Mobility $\hbox{HfO}_{2}$-Gated Ge pMOSFETs

In-memory computing with resistive switching devices

Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor

Analytical model for the high-temperature behaviour of the subthreshold slope in MuGFETs

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs

25th Anniversary Article: Semiconductor Nanowires – Synthesis, Characterization, and Applications

Fundamentals of Modern VLSI Devices

Electrostatic Screening of Charged Defects in Monolayer MoS₂

High Performance Multilayer MoS₂ Transistors with Scandium Contacts

Colloquium: Phononics: Manipulating heat flow with electronic analogs and beyond

Analysis of the Effects of Fringing Electric Field on FinFET Device Performance and Structural Optimization Using 3-D Simulation

Surface-Potential Solution for Generic Undoped MOSFETs With Two Gates

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes at Quasi NonEquilibrium

Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuits

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

On-line extraction of model parameters of a long buried-channel MOSFET

Observation of Metal-Layer Stress on Si Nanowires in Gate-All-Around High- $\kappa$/Metal-Gate Device Structures

Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications