Citation Impact
Citing Papers
Memristive devices for computing
2012 Standout
Intrinsic Mechanisms of Memristive Switching
2011
Present status of amorphous In–Ga–Zn–O thin-film transistors
2010 Standout
Graphene‐Based Materials: Synthesis, Characterization, Properties, and Applications
2011 Standout
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
2012 Standout
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
2011
Fundamentals of zinc oxide as a semiconductor
2009 Standout
Electron and Ambipolar Transport in Organic Field-Effect Transistors
2007 Standout
Thin films and devices of diamond, silicon carbide and gallium nitride
1993 StandoutNobel
Collective Motion of Conducting Filaments in Pt/n‐Type TiO2/p‐Type NiO/Pt Stacked Resistance Switching Memory
2011
Native point defects in ZnO
2007 Standout
Deposition of III-N thin films by molecular beam epitaxy
1994 StandoutNobel
X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces
1998 StandoutNobel
Influence of the Amorphous Silicon Thickness on Top Gate Thin-Film Transistor Electrical Performances
2001
The growth and morphology of epitaxial multilayer graphene
2008
Investigation of the structure and stability of the Pt/SiC(001) interface
1990
Fabrication of nanoscale three-dimensional graphite stacked-junctions by focused-ion-beam and observation of anomalous transport characteristics
2011
A critical review of ohmic and rectifying contacts for silicon carbide
1995 StandoutNobel
III-V nitrides for electronic and optoelectronic applications
1991 StandoutNobel
Field-effect mobility of polycrystalline tetrabenzoporphyrin thin-film transistors
2005
A photoemission study of 4HSiC(0001)
1996
The Shirley background revised
2006
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Growth of thin Ni films on GaN(0001)-(1×1)
1993
Factors Governing Oxygen Reduction in Solid Oxide Fuel Cell Cathodes
2004 Standout
Growth of AlN, GaN and AlxGa1 − xN thin films on vicinal and on-axis 6HSiC(0001) substrates
1997 StandoutNobel
Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide
1992 StandoutNobel
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
1991 StandoutNobel
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Mechanistic Insights and Controlled Synthesis of Radioluminescent ZnSe Quantum Dots Using a Microfluidic Reactor
2018 StandoutNobel
Molecular beam epitaxy of nitride thin films
1993 StandoutNobel
Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy
1989 StandoutNobel
Stationary properties of high-critical-temperature proximity effect Josephson junctions
1996
Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors
2009
Ambipolar charge transport in organic field-effect transistors
2006
X-ray photoelectron spectroscopy: Towards reliable binding energy referencing
2019 Standout
Growth kinetics and characterizations of gallium nitride thin films by remote PECVD
1993
Gas-source molecular beam epitaxy of III–V nitrides
1997 StandoutNobel
Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization
1996 StandoutNobel
High-transition-temperature superconducting quantum interference devices
1999 StandoutNobel
Synthesis of MoS2 and MoSe2 Films with Vertically Aligned Layers
2013 Standout
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
1988 StandoutNobel
EPR of [FA]0 centres in zinc chalcogenides
1994
Semiconducting π-Conjugated Systems in Field-Effect Transistors: A Material Odyssey of Organic Electronics
2011 Standout
Metal Schottky barrier contacts to alpha 6H-SiC
1992 StandoutNobel
Application of the Meyer–Neldel Rule to the Subthreshold Characteristics of Amorphous InGaZnO4Thin-Film Transistors
2009
Graphene based materials: Past, present and future
2011 Standout
Valence band discontinuity of the (0001) 2H-GaN / (111) 3C-SiC interface
1999 StandoutNobel
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
In-memory computing with resistive switching devices
2018 Standout
Ni/Si-Based Ohmic Contacts to p- and n-Type GaN
1997 StandoutNobel
Luminescence dynamics in ZnSeTe scintillators
2002
Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001)
1995 StandoutNobel
Luminescence and lattice parameter of cubic gallium nitride
1992 StandoutNobel
Charge Transport in Organic Semiconductors
2007 Standout
Graphene Based Electrochemical Sensors and Biosensors: A Review
2010 Standout
Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)
1995 StandoutNobel
Comparison of validity and consistency of methods for quantitative XPS peak analysis
1993
AlN/GaN superlattices grown by gas source molecular beam epitaxy
1991 StandoutNobel
Field-Effect Mobility of Organic Polymer Thin-Film Transistors
2004
Past achievements and future challenges in the development of optically transparent electrodes
2012 Standout
Deposition and characterization of diamond, silicon carbide and gallium nitride thin films
1994 StandoutNobel
Synthesis and electrochemical properties of an oxide electrode layer prepared by a new electroless plating technique
1994
Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics
2004 Standout
Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces
1999 StandoutNobel
The chemical and structural analysis of graphene oxide with different degrees of oxidation
2012 Standout
The SiC(0001)6√3 × 6√3 reconstruction studied with STM and LEED
1996
Honeycomb Carbon: A Review of Graphene
2009 Standout
25th Anniversary Article: The Evolution of Electronic Skin (E‐Skin): A Brief History, Design Considerations, and Recent Progress
2013 Standout
Works of Satoru Kishida being referenced
Observation of Josephson Junctionlike Behavior in Single-Crystal (Bi, Pb)2Sr2CaCu2Oy
1992
Correlation between the 1.1 and 1.45 eV Emission Bands and the F+ Optical Absorption Bands in ZnS Crystals
1987
Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors
1983
The difference between 6H-SiC (0001) and (000 ) faces observed by AES, LEED and ESCA
1990
Off-Angle SiC(0001) Surface and Cu/SiC Interface Reaction
1989
New approach for fabricating submicron scale intrinsic Josephson junctions using high-Tc superconducting materials
2001
Opposite bias polarity dependence of resistive switching in n-type Ga-doped-ZnO and p-type NiO thin films
2010
Background removal in x‐ray photoelectron spectroscopy
1992
The photosensitive optical absorption bands in zn-treated and neutron-irradiated znse single crystals
1986