Immediate Impact
2 hit
Citing Papers
GaN-based power devices: Physics, reliability, and perspectives
2021 Hit
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
2011 Hit
Works of Sang‐Heung Lee being referenced
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
2020
Polycrystalline silicon-germanium heating layer for phase-change memory applications
2006