Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
2001 StandoutNobel
Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation
1993
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
2006 StandoutNobel
Photoionization studies of transition metal clusters: Ionization potentials for Fen and Con
1990
Luminescence properties of defects in GaN
2005 Standout
Delayed electron emission from photoexcited C60
1991
Fluorescence and excitation spectra of Ag4 in an argon matrix
1999 StandoutNobel
Hydrogen passivation of acceptors in p-InP
1989
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Optical-confinement-factor dependencies of the K factor, differential gain, and nonlinear gain coefficient for 1.55 mu m InGaAs/InGaAsP MQW and strained-MQW lasers
1991 StandoutNobel
Hydrogen passivation of high purity n -type InP
1990
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
Direct observation of transition from delayed ionization to direct ionization for freeC 60 C 70
1993
Photodissociation spectroscopy of NbnArm complexes
1993
GaN: Processing, defects, and devices
1999
Ionization and Fragmentation ofC 60
1996 StandoutNobel
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
Self-assembly of the fullerenes
1992 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Photoelectron spectroscopy of transition-metal clusters: Correlation of valence electronic structure to reactivity
1995 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Hydrogen interactions with defects in crystalline solids
1992 Standout
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Intensity noise in 1.5µm GaInAs quantum well buried heterostructure lasers
1989
Works of Sandhya Cole being referenced
High-performance, high-reliability buried heterostructure lasers by MOVPE
1988
Effect of cooling ambient on electrical activation of dopants in MOVPE of InP
1988
Metastable decay of photoionized niobium clusters: Clusters within a cluster?
1988