Citation Impact
Citing Papers
Strong nonlinear current–voltage behaviour in perovskite-derivative calcium copper titanate
2004 Standout
Damage-free separation of GaN thin films from sapphire substrates
1998
Cathodoluminescence from intermixed quantum‐well structures: Evidence of remote luminescence
1993
Photovoltaics: A review of cell and module technologies
1997
Film/Substrate Orientation Relationship in theAIN / 6 H
1996 StandoutNobel
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
Characterisation of metal mirrors on GaAs
1996
Recent results and latest views on microcavity LEDs
2004 StandoutNobel
Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy
1989 StandoutNobel
Molecular-Scale Electronics: From Concept to Function
2016 Standout
Electrical properties of grain boundaries in polycrystalline compound semiconductors
1990
Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
2004 StandoutNobel
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
2014 StandoutNobel
Seawater desalination using renewable energy sources
2005 Standout
Nonlinear resistive electric field grading Part 2: Materials and applications
2011 Standout
Controlling Semiconductor/Metal Junction Barriers by Incomplete, Nonideal Molecular Monolayers
2006
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
THERMOLUMINESCENCE DATING: BETA‐DOSE ATTENUATION IN QUARTZ GRAINS
1979 Standout
Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors
1996
Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substrates
1987
Evidence of unique-parity band structure in neutron-rich odd-ARu isotopes
1995 StandoutNobel
Observation of the Spin Hall Effect in Semiconductors
2004 StandoutScience
Morphology of organometallic CVD grown GaAs epitaxial layers
1983
Band offsets at the GaInP/GaAs heterojunction
1997
Strain in cracked AlGaN layers
2002 StandoutNobel
X-Ray Fluorescence Yields, Auger, and Coster-Kronig Transition Probabilities
1972 Standout
Optical properties of metallic films for vertical-cavity optoelectronic devices
1998 Standout
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Multi-criteria assessment of new and renewable energy power plants
2002 Standout
High-spin states in 109,111Cd and 107Pd
1994
Radioactive atoms
1970
Energy levels of A = 21–44 nuclei (VI)
1978 Standout
Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
1993
Lifetime measurements in 38Ar
1968
Works of S. Shastry being referenced
Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond
1991
Nuclear level structure of low lying levels of109Cd
1977
Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si
1986
Decay of Y88 to the 3.22 and 3.52 MeV levels of Sr88
1964
On the electric dipole and octupole transitions in 88Sr
1966
On the collective octupole state of 88Sr
1967
Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy
1994
Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si
1986
The preparation and properties of thin polycrystalline GaAs solar cells with grain boundary edge passivation
1980
Evaluation of n-GaAs polycrystalline layers for solar cells using an electrochemical technique
1980