Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Heterogeneous photocatalyst materials for water splitting
2008 Standout
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Mie Resonances, Infrared Emission, and the Band Gap of InN
2004 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Growth and applications of Group III-nitrides
1998
Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
1994 StandoutNobel
Optical bandgap energy of wurtzite InN
2002
Heteroepitaxial growth of InN by microwave-excited metalorganic vapor phase epitaxy
1989
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Properties of Ga1-xInxN Films Prepared by MOVPE
1989
Infrared lattice vibrations of GaN
1992
The role of ledges in creep of TiAl alloys with fine lamellar structures
1998
Organic Photoredox Catalysis
2016 Standout
Band-gap bowing in Ga1−xInxN alloys
1997
Effect of deformation twinning on microstructure and texture evolution during cold rolling of CP-titanium
2005
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys
1998
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
First-principles calculations of gap bowing inIn x Ga 1 − x N andIn x Al 1 − x N alloys: Relation to structural and thermodynamic properties
2002
A three-dimensional crystal plasticity model for duplex Ti–6Al–4V
2007
Quantized states inGa 1 − x In x N / GaN heterostructures and the model of polarized homogeneous quantum wells
2000 StandoutNobel
Properties of cubic (In,Ga)N grown by molecular beam epitaxy
1999
Optical investigations of AlGaN on GaN epitaxial films
1999 StandoutNobel
Anisotropy in the plastic flow properties of single-crystal α titanium determined from micro-cantilever beams
2009
On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
1998 StandoutNobel
Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy
2000 StandoutNobel
Growth of () compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes
1994 StandoutNobel
A new model for the peak of activation area of α titanium
1995
Optical properties of InGaN quantum wells
1999 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
III–V nitride based light-emitting devices
1997 StandoutNobel
Anisotropy in the room-temperature deformation ofα–βcolonies in titanium alloys: role of theα–βinterface
2004
High-temperature structural intermetallics
2000 Standout
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2010 StandoutNobel
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N quantum-well structures
2000 StandoutNobel
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
1999 StandoutNobel
An Auger investigation of the fracture behavior of PST TiAl alloys
1997
Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
2011 StandoutNobel
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
Near IR optical properties of sputtered InN films
1990
Physical properties of InN with the band gap energy of 1.1 eV
2001
Analysis of the different slip systems activated by tension in a α/β titanium alloy in relation with local crystallographic orientation
2004
Characterization of blue-green m-plane InGaN light emitting diodes
2009 StandoutNobel
Dynamics and polarization of group-III nitride lattices: A first-principles study
2000
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Phase separation in InGaN grown by metalorganic chemical vapor deposition
1998
Pseudopotential calculations of electronic properties of Ga1−xInxN alloys with zinc-blende structure
2000
Epitaxial layers of indium nitride by microwave-excited metalorganic vapor phase epitaxy
1990
Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting
2011 StandoutNobel
Electronic band structures and effective-mass parameters of wurtzite GaN and InN
1998
Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
2015 Nobel
Directional bonding and asymmetry of interfacial structure in intermetallic TiAl: Combined theoretical and electron microscopy study
1997
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Perspectives on Titanium Science and Technology
2013 Standout
Calculation of electric field and optical transitions in InGaN∕GaN quantum wells
2005
Deformation of lamellar structure in TiAl-Ti3Al two-phase alloys
1998
GaN: Processing, defects, and devices
1999
Evaluation of physical parameters for the group III nitrates: BN, AlN, GaN, and InN
2002
The role of grain size and selected microstructural parameters in strengthening fully lamellar TiAl alloys
1998
Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diode
1998
Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
2000 StandoutNobel
Emerging gallium nitride based devices
1995
High-power InGaN/GaN double-heterostructure violet light emitting diodes
1993 StandoutNobel
Electronic structure calculations on nitride semiconductors
1999
Present and future aspects of blue light emitting devices
1997 StandoutNobel
Evolution of texture during thermomechanical processing of titanium and its alloys
2008
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition
2007 StandoutNobel
Nanometer-scale, fully lamellar microstructure in an aged TiAl-based alloy
1998
Microstructure-based crystal plasticity modeling of cyclic deformation of Ti–6Al–4V
2007
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Exciton localization in InGaN quantum well devices
1998 StandoutNobel
A dislocation density-based crystal plasticity constitutive model for prismatic slip in α-titanium
2011
Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga1-xInxN Calculated by the Tight-Binding Method
1995
Influence of potential fluctuations on electrical transport and optical properties in modulation-dopedG a N / A l 0.28 Ga 0.72 N heterostructures
1998 StandoutNobel
Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
1998 StandoutNobel
MOVPE of GaInN heterostructures and quantum wells
1998
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
2000
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Creep behaviour of Ti-6Al-2Sn-4Zr-2Mo: II. Mechanisms of deformation
2002
Epitaxial growth of indium nitride
1990
Atomic Insight into the Layered/Spinel Phase Transformation in Charged LiNi0.80Co0.15Al0.05O2 Cathode Particles
2017 StandoutNobel
Phonon structure of InN grown by atomic layer epitaxy
1999
Microstructure and deformation of two-phase γ-titanium aluminides
1998
Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure
1994 StandoutNobel
Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy
1982
Influence of composition fluctuations and strain on gap bowing inIn x Ga 1 − x N
2001
InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films
1993 StandoutNobel
Microstructure and electronic properties of InGaN alloys
2003
Band parameters for nitrogen-containing semiconductors
2003 Standout
Optical properties of doped InGaN/GaN multiquantum-well structures
1999 StandoutNobel
An atomistic study of segregation to lamellar interfaces in non-stoichiometric TiAl alloys
1998
Band-gap evolution, hybridization, and thermal stability ofIn x Ga 1 − x N alloys measured by soft X-ray emission and absorption
2002
The effect of oxygen and stress state on the yield behavior of commercially pure titanium
2012
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of S. Naka being referenced
Phase transformation mechanisms involved in two-phase TiAl-based alloys—II. Discontinuous coarsening and massive-type transformation
1996
High-resolution electron microscopy study of γ-γTtwin interfaces in the lamellar structure of TiAl-based alloys
1994
Advanced titanium-based alloys
1996
On the existence of transformation-induced antiphase boundaries in the γ-phase of two-phase TiAl-based alloys
1993
The plasticity of titanium at low and medium temperatures
1991
Phase transformation mechanisms involved in two-phase TiAl-based alloys—I. Lambellar structure formation
1996
The low-temperature plastic deformation of α-titanium and the core structure of a-type screw dislocations
1988
Preparation and optical properties of Ga1−xInxN thin films
1975
Prismatic slip in the plastic deformation of α-Ti single crystals below 700 K
1982
A QUANTITATIVE TEM ANALYSIS OF THE LAMELLAR MICROSTRUCTURE IN TiAl BASED ALLOYS
1997
Étude de la texture et des mécanismes de recristallisation primaire d'une tôle mince de titane laminée puis recuite en phase alpha
1977
Atom-probe investigation of the partitioning of interstitial elements in two-phase γ+α2 TiAl-based alloys
1993
High resolution determination of the core structure of 1/3⟨112 0⟩ {101 0} edge dislocation in titanium
1983
Cross-slip on the first order pyramidal plane (10 $$\bar 1$$ 1) of a-type dislocations [1 $$\bar 2$$ 10] in the plastic deformation of ?-titanium single crystals
1983