Citation Impact
Citing Papers
Lanthanide luminescence for functional materials and bio-sciences
2009 Standout
Enhanced Phosphorescence Emission by Incorporating Aromatic Halides into an Entangled Coordination Framework Based on Naphthalenediimide
2014 StandoutNobel
Nanoparticles, Proteins, and Nucleic Acids: Biotechnology Meets Materials Science
2001 Standout
Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates
2004
Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
2010 StandoutNobel
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
2000
Optical characterization of III-nitrides
2002 StandoutNobel
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Emergence of colloidal quantum-dot light-emitting technologies
2012 StandoutNobel
Optical Gain and Stimulated Emission in Nanocrystal Quantum Dots
2000 StandoutScienceNobel
Discrete Tunable Color Entanglement
2009 StandoutNobel
Experimental studies of the conduction-band structure of GaInNAs alloys
2002
Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields
2009 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements
2000
Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications
2000 StandoutNobel
Group III-nitride based hetero and quantum structures
2000
Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)
2002
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Assessment of sustainability indicators for renewable energy technologies
2008 Standout
Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
2002 StandoutNobel
The present status of quantum dot lasers
1999
Nonlinear AlGaAs waveguide for the generation of counterpropagating twin photons in the telecom range
2005
Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
2013 StandoutNobel
Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy
2001
Coordination complexes exhibiting room-temperature phosphorescence: Evaluation of their suitability as triplet emitters in organic light emitting diodes
2006
Band parameters for nitrogen-containing semiconductors
2003 Standout
Life cycle assessment of thin‐film GaAs and GaInP/GaAs solar modules
2006
Works of S. Leu being referenced
Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics
1999
Surface-emitting second-harmonic generation in AlGaAs/GaAs waveguides
2002
C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs
1998
High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios
2001
(GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range
2000
Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm
1999