Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Upconverting Nanoparticles
2011 Standout
Narrow-band red-emitting Sr[LiAl3N4]:Eu2+ as a next-generation LED-phosphor material
2014 Standout
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Maskless pendeo-epitaxial growth of GaN films
2002 StandoutNobel
Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes
2007 StandoutNobel
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates
2010
Blue upconversion enhancement by a factor of 200 in Tm3+-doped tellurite glass by codoping with Nd3+ ions
2002
Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes
2007 StandoutNobel
Upconversion Nanoparticles: Design, Nanochemistry, and Applications in Theranostics
2014 Standout
Recent progress in high-power blue-violet lasers
2003
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
2013 StandoutNobel
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
2006 StandoutNobel
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
2009 StandoutNobel
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
2010 StandoutNobel
60 mW Pulsed and Continuous Wave Operation of GaN-Based Semipolar Green Laser with Characteristic Temperature of 190 K
2011
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
2007 StandoutNobel
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Growth of m ‐GaN layers by epitaxial lateral overgrowth from sapphire sidewalls
2009
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green
2009
Reduction of Internal Loss and Threshold Current in a Laser Diode with a Ridge by Selective Re-Growth (RiS-LD)
2002
AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes
2007 StandoutNobel
Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2010 StandoutNobel
Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates
2007 StandoutNobel
Degradations of silicon photovoltaic modules: A literature review
2013
Epitaxial Lateral Overgrowth of GaN
2001
Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence
2002 StandoutNobel
Anisotropy of the Free Exciton Emission in GaN Grown on a-Plane Sapphire
2002
Optical characterization of wide bandgap semiconductors
2000 StandoutNobel
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
2002 StandoutNobel
Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
2017
Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm
2009
Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates
2011 StandoutNobel
Growth of Prismatic GaN Single Crystals with High Transparency on Small GaN Seed Crystals by Ca–Li-Added Na Flux Method
2012
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations
2009 StandoutNobel
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
2011 StandoutNobel
Solid-state lighting
2004
Gallium Indium Nitride-Based Green Lasers
2011
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
2013 StandoutNobel
High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate
2007 StandoutNobel
Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
2012 StandoutNobel
Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes
2003
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
2013 StandoutNobel
High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
2011 StandoutNobel
Optical waveguide simulations for the optimization of InGaN-based green laser diodes
2010 StandoutNobel
Fault detection and diagnosis methods for photovoltaic systems: A review
2018 Standout
Effects of thermal annealing of ZnO layers grown by MBE
2000
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Photoluminescence Spectra of Eu2+Centers in Ca(S, Se):Eu and Sr(S, Se):Eu
1995
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
III–V Nitrides: A New Age for Optoelectronics
2003
Blue and green semiconductor lasers: a status report
1997
100-mW kink-free blue-violet laser diodes with low aspect ratio
2003
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Recombination dynamics of localized excitons in self-formed InGaN quantum dots
1997 StandoutNobel
Solid-State Light Sources Getting Smart
2005 StandoutScience
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
2013 StandoutNobel
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
2011 StandoutNobel
Green luminescent center in undoped zinc oxide films deposited on silicon substrates
2001 Standout
Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes
2007
Substrates for gallium nitride epitaxy
2002
Semipolar (2021) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
2013 StandoutNobel
Works of S. Kijima being referenced
Estimation of Device Properties in AlGaInN-Based Laser Diodes by Time-Resolved Photoluminescence
2001
High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise
2002
GaN-Based High Power Blue-Violet Laser Diodes
2001
Significant progress in II-VI blue-green laser diodelifetime
1998
GaN-based high-power laser diodes
2001
II-VI laser diode with low operating voltage andlong device lifetime
1998
400-nm Band AlGaInN-Based High Power Laser Diodes
2001
Kinetic model for degradation of light-emitting diodes
1997
High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes
1995
Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers
2001
Universal curves for optical power degradation of II–VI light-emitting diodes
1996
Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers
2000
GaN-based blue laser diodes
2001
AlGaInN-based laser diodes
2000
Spectra of magnetic circular dichroism of absorption and luminescence of Eu-doped CaS single crystals
1993
AlGaInN high-power lasers grown on an ELO-GaN layer
2000