Rui Jiang

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

Ultrabroadband and High-Detectivity Photodetector Based on WS₂/Ge Heterojunction through Defect Engineering and Interface Passivation

Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer

Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)