Immediate Impact
8 standout
Citing Papers
Gallium nitride-based complementary logic integrated circuits
2021 Standout
Graphite as anode materials: Fundamental mechanism, recent progress and advances
2020 Standout
Works of Romain Esteve being referenced
MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001)
2011
3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide
2011
Author Peers
| Author | Last Decade | Papers | Cites | ||||
|---|---|---|---|---|---|---|---|
| Romain Esteve | 123 | 24 | 4 | 29 | 15 | 147 | |
| R.K. Montgomery | 160 | 17 | 17 | 95 | 21 | 217 | |
| M. Azimi | 173 | 12 | 2 | 62 | 13 | 237 | |
| J.L. Huckaby | 31 | 13 | 3 | 23 | 10 | 136 | |
| D. E. Berkaev | 40 | 12 | 10 | 12 | 17 | 184 | |
| Jens Freese | 84 | 80 | 1 | 17 | 19 | 234 | |
| C. Félix | 95 | 19 | 111 | 18 | 176 | ||
| Pengcheng Zhao | 194 | 9 | 1 | 48 | 17 | 251 | |
| A. R. Wade | 30 | 5 | 59 | 16 | 120 | ||
| Navneet Sharma | 151 | 11 | 5 | 16 | 13 | 174 | |
| T. Takeuchi | 96 | 37 | 2 | 27 | 11 | 199 |
All Works
Loading papers...