R.H. Moss

Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

Metalorganic chemical vapour deposition of oriented ZnO films

A comprehensive review of ZnO materials and devices

Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windows

Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy

Photo-assisted homoepitaxial growth of ZnS by molecular beam epitaxy

Zn related electroluminescent properties in MOVPE grown GaN

Solar System Abundances and Condensation Temperatures of the Elements

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Excimer laser induced deposition of InP and indium-oxide films

Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques

Improved uniformity of epitaxial indium-based compounds by atomic layer epitaxy

Photoluminescence from narrow InAs-AlSb quantum wells

The use of heterocyclic compounds in the organometallic chemical vapour deposition of epitaxial ZnS, ZnSe and ZnO

Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_1-x

Nebular condensation of Ga, Ge and Sb and the chemical classification of iron meteorites

Effects of the interface bonding type on the optical and structural properties of InAs-AlSb quantum wells

Factors influencing the presence and detection of compositional grading at semiconductor hetero-epitaxial interfaces

Condensation and the composition of iron meteorites

A simple method for calculation of the composition of VPE grown GaxIn1−xAs layers as a function of growth parameters

Vapour phase growth of mixed III–V compounds in the Ga-In-As-P system

Modified entrainment method for measuring vapour pressures and heterogeneous equilibrium constants. Part 4.—The gallium arsenide/hydrogen chloride system

Vapour phase hetero-epitaxy: Growth of GaInAs layers

The effects of strain on the growth of lattice mismatched superlattices

Adducts in the growth of III–V compounds

Modified entrainment method for measuring vapour pressures and heterogeneous equilibrium constants. Part 2.—Equilibria in the water/gallium system

A new approach to MOCVD of indium phosphide and gallium-indium arsenide