Raphaël Renoud

Evidence for Two Mg Related Acceptors in GaN

Inelastic Electron Interactions in the Energy Range 50 eV to 10 keV in Insulators: Alkali Halides and Metal Oxides

Attosecond streaking metrology with isolated nanotargets

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Oxygen related shallow acceptor in GaN

Dominant shallow acceptor enhanced by oxygen doping in GaN

Dissociation of H-related defect complexes in Mg-doped GaN

Simulation of insulator charging by a narrow electron beam

Monte Carlo simulation of the charge distribution induced by a high-energy electron beam in an insulating target