Standout Papers

Vacancy Association of Defects in Annealed GaAs 1971 2026 1989 2007 39
  1. Vacancy Association of Defects in Annealed GaAs (1971)
    L. L. Chang, L. Esaki et al. Applied Physics Letters

Citation Impact

Citing Papers

Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Carrier-envelope phase stabilization of a multi-millijoule, regenerative-amplifier-based chirped-pulse smplifier dystem
2009 StandoutNobel
Platinum single-atom and cluster catalysis of the hydrogen evolution reaction
2016 Standout
Leakage Current Characteristics of Lead-Zirconate-Titanate Thin Film Capacitors for Memory Device Applications
1998
The ReaxFF reactive force-field: development, applications and future directions
2016 Standout
Germanium nanowires: from synthesis, surface chemistry, and assembly to devices
2006
Surface reaction and selective growth investigation of temperature modulation Si molecular-layer epitaxy
2001
Physics of thin-film ferroelectric oxides
2005 Standout
Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
1994
Luminescence properties of defects in GaN
2005 Standout
Growth process of Ge on Si(100)-(2×1)in atomic-layer epitaxy fromGe2H6
1997
Atomic Layer Deposition Functionalized Composite SOFC Cathode La0.6Sr0.4Fe0.8Co0.2O3-δ -Gd0.2Ce0.8O1.9: Enhanced Long-Term Stability
2013 StandoutNobel
Multilayer ceramic capacitors
1997
Novel method for chemical vapor deposition and atomic layer epitaxy using radical chemistry
1993
Atomic layer epitaxy of germanium
1994
Optical characterization of III-nitrides
2002 StandoutNobel
The interaction of water with solid surfaces: fundamental aspects revisited
2002 Standout
Atomic Layer Deposition: An Overview
2009 Standout
Modeling of silicon atomic-layer-epitaxy
1996
Photoluminescence in Gallium Arsenide irradiated with thermal neutrons
1981
Atomic layer epitaxy of Si on Ge(100): Direct recoiling studies of film morphology
1994
Epitaxial Si films on Ge(100) grown via H/Cl exchange
1993
Atomic layer epitaxy of Si using atomic H
1993
New Si atomic-layer-controlled growth technique with thermally cracked hydride molecule
2002
Si crystal growth mediated by synchrotron-radiation-stimulated hydrogen desorption
1993
Transport phenomena in nanofluidics
2008 Standout
Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
1993
Reaction kinetics in synchrotron-radiation-excited Si epitaxy with disilane. I. Atomic layer epitaxy
1995
Sub-atomic-layer epitaxy of Si using Si2H6
1994
Growth Temperature Window and Self-Limiting Process in Sub-Atomic-Layer Epitaxy
1996
Irradiation-induced defects in GaAs
1985 Standout
Stepped NaCl films grown epitaxially on Si-precovered vicinal Ge(100)
2000
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
1998
Temperature effects on synchrotron-radiation-excited Si atomic layer epitaxy using disilane
1994
Observation and control of surface reaction during Si molecular layer growth
2000
Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
2003
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
High-k/Ge MOSFETs for future nanoelectronics
2008
Atomic-Layer Epitaxy of Silicon on (100) Surface
2000
Surface morphology investigation of Si thin film grown by temperature modulation Si molecular-layer epitaxy
2001
Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications
1999
Hydrogen atom assisted ALE of silicon
1994
Identification of a defect in a semiconductor:EL2 in GaAs
1986 Standout
The effect of gas-phase stoichiometry on deep levels in vapor-grown GaAs
1977
The role of hydride coverage in surface-limited thin-film growth of epitaxial silicon and germanium
1993
Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxy
1975
Characterization of self-limitingSiH2Cl2chemisorption and photon-stimulated desorption as elementary steps for Si atomic-layer epitaxy
1996
Growth of Si on Si(100) via H/Cl exchange and the effect of interfacial boron
1992
Characterization of high purity GaAs grown by molecular beam epitaxy
1982 StandoutNobel
Electroceramics for High-Energy Density Capacitors: Current Status and Future Perspectives
2021 Standout
Atomic hydrogen-assisted ALE of germanium
1995
Adsorption and thermal reactions of disilane and the growth of Si films on Ge(100)-(2×1)
1993
Photoluminescence in Mn-implanted GaAs—An explanation on the ∼1.40-eV emission
1979
Si Atomic-Layer Epitaxy Using Thermally Cracked Si2H6
1999
Atomic layer epitaxy: chemical opportunities and challenges
1993

Works of R. Tsu being referenced

Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning
1993
Si2H6 adsorption and dissociation pathways on Ge(001)2 ×1: mechanisms for heterogeneous atomic layer epitaxy
1993
Correlations of Ba1−xSrxTiO3Materials and Dielectric Properties
1994
Mechanisms and kinetics of Si atomic-layer epitaxy on Si(001)2×1 from Si2H6
1991
Vacancy Association of Defects in Annealed GaAs
1971 StandoutNobel
Scanning-tunneling-microscopy studies of disilane adsorption and pyrolytic growth on Si(100)-(2x1)
1992
Direct current conduction properties of sputtered Pt/(Ba0.7Sr0.3)TiO3/Pt thin films capacitors
1995
Adsorption and dissociation of Si2H6 on Ge(001)2 × 1
1993
Rankless by CCL
2026