Standout Papers
Citation Impact
Citing Papers
Effects of Si ion implantation and post-annealing on yellow luminescence from GaN
2002
Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire
1997
Two-dimensionalD −
1990
Deep acceptors trapped at threading-edge dislocations in GaN
1998
Properties of zinc acceptor and exciton bound to zinc in ammonothermal GaN
2002
Exciton and donor - acceptor recombination in undoped GaN on Si(111)
1997
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Nanocomposite Catalysts Producing Durable, Super-Black Carbon Nanotube Systems: Applications in Solar Thermal Harvesting
2012
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Dynamic emission Stokes shift and liquid-like dielectric solvation of band edge carriers in lead-halide perovskites
2019 StandoutNobel
Structural absorption by barbule microstructures of super black bird of paradise feathers
2017 Standout
Optical nano-imaging of gate-tunable graphene plasmons
2012 StandoutNature
Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
2003 StandoutNobel
Probing the Synthesis of Two‐Dimensional Boron by First‐Principles Computations
2013
Raman scattering from phonon-polaritons in GaN
2000 StandoutNobel
Depth profiling of GaN by cathodoluminescence microanalysis
1999
Direct experimental evidence for the role of oxygen in the luminescent properties of GaN
1999
Control of strain in GaN using an In doping-induced hardening effect
2001 StandoutNobel
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study
2002
Luminescence of Acceptors in Mg-Doped GaN
2013 StandoutNobel
Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology
1999
Free-carrier effects in gallium nitride epilayers: Valence-band dispersion
2001
AMMONO method of BN, AlN and GaN synthesis and crystal growth.
1998
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
Structural and vibrational properties of GaN
1999 StandoutNobel
The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD
2001
Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy
1998
Origin of the red luminescence in Mg-doped GaN
2006
Temperature quenching of photoluminescence intensities in undoped and doped GaN
1999
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
2001
Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy
2005
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Exciton binding energies and band gaps in GaN bulk crystals
1998
Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence
2002
Layer‐by‐Layer J‐Aggregate Thin Films with a Peak Absorption Constant of 106 cm–1
2005
Yellow and green luminescence in a freestanding GaN template
2001
Acceptors in undoped GaN studied by transient photoluminescence
2002
Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN
2001 StandoutNobel
Transient photoluminescence of shallow donor bound excitons in GaN
2010
Luminescence properties of defects in GaN
2005 Standout
Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
1998
Halide Perovskite Photovoltaics: Background, Status, and Future Prospects
2019 Standout
Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors
2010
Calculated properties of point defects in Be-doped GaN
2003
A comprehensive review of ZnO materials and devices
2005 Standout
In x Ga 1−x N/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN
1999
Quantized states inGa 1 − x In x N / GaN
2000 StandoutNobel
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire
2002
Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition
2001 StandoutNobel
Two-dimensional donor-bound excitons in the extreme magnetic quantum limit
1993
Production and processing of graphene and 2d crystals
2012
Optically detected magnetic-resonance mapping on the yellow luminescence in GaN
2000
Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
2001
Relationship between crystallographic orientation and 3.42 eV emission bands in GaN grown by HVPE on Si substrate
1999
Optical properties of tensile-strained wurtzite GaN epitaxial layers
1997 StandoutNobel
Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer
1999
Selective excitation and thermal quenching of the yellow luminescence of GaN
1999
Some effects of oxygen impurities on AlN and GaN
2002
Optical characterization of III-nitrides
2002 StandoutNobel
Positron studies of MBE-grown gallium nitride
1999
Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
1998
Temperature dependence of excitonic luminescence from nanocrystalline ZnO films
2002
A point defect complex related to the yellow luminescence in electron irradiated GaN
2001
Selective excitation of the yellow luminescence of GaN
1999
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
2001 StandoutNobel
Hydrogen-like Wannier–Mott Excitons in Single Crystal of Methylammonium Lead Bromide Perovskite
2016
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
III-V nitrides—important future electronic materials
1999
Photoluminescence of GaN: Effect of electron irradiation
1998 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Multicomponent magneto-optical conductivity of multilayer graphene on SiC
2011
Near-bandedge cathodoluminescence of an AlN homoepitaxial film
2004
Chemical origin of the yellow luminescence in GaN
2002
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Investigation of optical metastability in GaN using photoluminescence spectroscopy
2003
Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN
2003
Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
2002
Spin-exchange splitting of excitons in GaN
2001
Unraveling the Exciton Binding Energy and the Dielectric Constant in Single-Crystal Methylammonium Lead Triiodide Perovskite
2017
Vacancies as compensating centers in bulk GaN: doping effects
2002
Pressure and Time‐Resolved Photoluminescence Studies of Mg‐Doped and Undoped GaN
1996
Many body shakeup in quantum well luminescence spectra
1993
GaN homoepitaxial layers grown by metalorganic chemical vapor deposition
1999
Optical properties of wurtzite GaN epilayers grown onA
1998 StandoutNobel
Color-Selective Photocurrent Enhancement in Coupled J-Aggregate/Nanowires Formed in Solution
2011 StandoutNobel
Optical characterization of bulk GaN grown by a Na–Ga melt technique
2002
Uniaxial Stress Effects On Valence Band Structures Of GaN
1997
Cooling dynamics of excitons in GaN
1999 StandoutNobel
Rashba Effect in a Single Colloidal CsPbBr3 Perovskite Nanocrystal Detected by Magneto-Optical Measurements
2017
ODMR of bound excitons in Mg-doped GaN
1999
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Dynamics of excitonic recombination and interactions in homoepitaxial GaN
2002
Nature of acceptor states in magnesium-doped gallium nitride
2005
Mode-locking in Er-doped fiber laser based on mechanically exfoliated Sb_2Te_3 saturable absorber
2013
Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN
2001
Reflectance spectroscopy on GaN films under uniaxial stress
1997
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Free excitons with n=2 in bulk GaN
1997
Near Defect Free GaN Substrates
1999
Exciton dynamics in homoepitaxial GaN
1997
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Effect of strain on GaN exciton spectra
1996
Electronic band structures and effective-mass parameters of wurtzite GaN and InN
1998
ODEPR and yellow luminescence intensity in GaN under high pressure
2001
Optical bandgap formation in AlInGaN alloys
2000
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers
2001
Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
1999
Vacancy Defects as Compensating Centers in Mg-Doped GaN
2003
Nature of the 2.8-eV photoluminescence band in Si-doped GaN
2000
Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure
1997
Probing Linewidths and Biexciton Quantum Yields of Single Cesium Lead Halide Nanocrystals in Solution
2017 StandoutNobel
Origin of the Q=11 meV bound exciton in GaN
1997
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
2000
Valence band structure of AlN probed by photoluminescence
2008
Variation of GaN valence bands with biaxial stress and quantification of residual stress
1997 StandoutNobel
High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH 3 on Surface Cracking
1997
Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage
2015 StandoutScience
Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs
2015 StandoutScience
A review on mechanical exfoliation for the scalable production of graphene
2015
The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals
1999
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
1999
Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?
2016 Standout
Synthesis and Development of Graphene–Inorganic Semiconductor Nanocomposites
2015
Optical and structural studies of homoepitaxially grown m-plane GaN
2012
Ga vacancies and grain boundaries in GaN
2003
Determination of valence band splitting parameters in GaN
1998
Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
2003
Polariton and free-exciton-like photoluminescence in ZnO
2001
1996 StandoutNobel
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Photoluminescence of GaN Grown by Molecular Beam Epitaxy on Freestanding GaN Template
2002
Homoepitaxial growth of GaN using molecular beam epitaxy
1996
Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals
2001
Exciton-phonon interactions, exciton binding energy, and their importance in the realization of room-temperature semiconductor lasers based on GaN
1998
Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy
1999
Free Excitons in GaN
1996 StandoutNobel
Spatial distribution of electron concentration and strain in bulk GaN single crystals - relation to growth mechanism
1996
Bound excitons in GaN
2001
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Effect of silicon and oxygen doping on donor bound excitons in bulk GaN
2011
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Free and Bound Excitons in GaN Epitaxial Films
1996
Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods
2002
Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
2004
Local conduction band offset of GaSb self-assembled quantum dots on GaAs
1997 StandoutNobel
Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals
1999
Free excitons in wurtzite GaN
2001
Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy
2007
Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
2000 StandoutNobel
Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy
2003
Polarized photoluminescence study of free and bound excitons in free-standingGaN
2004
On the hole effective mass and the free hole statistics in wurtzite GaN
2003
Nanoelectronic circuits based on two-dimensional atomic layer crystals
2014
Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN
2003
Effect of reactive ion etching on the yellow luminescence of GaN
1999
Fermi-edge singularity in resonant tunneling
1994 StandoutNobel
Recombination of free and bound excitons in GaN
2008
Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN
2000 StandoutNobel
Variational studies ofD 0 D −
1994
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Electron effective mass in hexagonal GaN
1999
Electronic structures of GaN edge dislocations
2000
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Dominant shallow acceptor enhanced by oxygen doping in GaN
2006 StandoutNobel
Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN
2003
Mg in GaN: the structure of the acceptor and the electrical activity
2003
Longitudinal Excitons in GaN
2002
Ionized donor bound excitons in GaN
1997
Ga vacancies in electron irradiated GaN: introduction, stability and temperature dependence of positron trapping
2001
Reflectance and emission spectra of excitonic polaritons in GaN
1999
Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN
2001
Works of R. Stępniewski being referenced
Fine Structure of Effective Mass Acceptors in Gallium Nitride
2003
Dynamics of ground and excited states of bound excitons in gallium nitride
2004
Graphene Epitaxy by Chemical Vapor Deposition on SiC
2011
Reply to “Comment on ‘Recombination of excitons bound to oxygen and silicon donors in freestanding GaN’ ”
2004
Dynamics of trapping on donors and relaxation of the B‐exciton in GaN
2002
Auger recombination within Landau levels in a two-dimensional electron gas
1991
Resonant interaction of LO phonons with excited donor states in GaN
2002
Magneto-optical properties of shallow donors in planar-doped GaAs-GaA1As multi-quantum-wells
1989
Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates
1996
Dielectric Function Theory Calculations of Polaritons in GaN
1997
Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields
1998
Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
1998
Photoluminescence studies of planar-doped GaAs-Ga 1 − x Al x
1989
Shallow Donors and Acceptors in GaN; Bound Excitons and Pair Spectra
1996
Coupling of LO Phonons to Excitons in GaN
1996
Observation of Native Ga Vacancies in GaN by Positron Annihilation
1997
Magnetopolaron effect on shallow donors in GaN
2006
Symmetry of excitons in GaN
1999
Quasiclassical cyclotron resonance of Dirac fermions in highly doped graphene
2010
Observation Of Native Ga Vacancies In Gan By Positron Annihilation
1997
Exciton region reflectance of homoepitaxial GaN layers
1996
Polarised Magnetoluminescence of Excitons in Homoepitaxial GaN Layers
1999
GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
1995
Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN
1998 StandoutNobel
Recombination of excitons bound to oxygen and silicon donors in freestanding GaN
2002
Polariton effects in reflectance and emission spectra of homoepitaxial GaN
1997
Structural and Optical Properties of Homoepitaxial GaN Layers
1996