Standout Papers
- Control of diamond heteroepitaxy on nickel by optical reflectance (1997)
- Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio (2002)
- Structural and electronic properties of boron nitride thin films containing silicon (1998)
- High temperature nucleation and growth of GaN crystals from the vapor phase (2002)
- Surface melting in the heteroepitaxial nucleation of diamond on Ni (1998)
- Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy (1998)
- Hot electron transport in AlN (2000)
Citation Impact
Citing Papers
Systematic Prediction of Kinetically Limited Crystal Growth Morphologies
2005
Complex and oriented ZnO nanostructures
2003 Standout
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
2013
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Electron paramagnetic resonance of a donor in aluminum nitride crystals
2006
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
2015
Field Nanoemitters: Ultrathin BN Nanosheets Protruding from Si3N4 Nanowires
2006
Graphitic carbon nitride materials: controllable synthesis and applications in fuel cells and photocatalysis
2012 Standout
Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy
2009
Boron Nitride Nanotubes and Nanosheets
2010 Standout
Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride
2013
Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification
2006 StandoutNobel
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
The progress of AlN bulk growth and epitaxy for electronic applications
2009
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
2016
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Diamond-like amorphous carbon
2002 Standout
Improved growth rates and purity of basic ammonothermal GaN
2014 StandoutNobel
Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
2005
High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
2006 StandoutNobel
Nitrogen-polar GaN growth evolution on c-plane sapphire
2008
X-ray characterization of bulk AIN single crystals grown by the sublimation technique
2003
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
3D printing of piezoelectric element for energy focusing and ultrasonic sensing
2016
Ammonothermal Synthesis of III-Nitride Crystals
2006
Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy
2006 StandoutNobel
150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm
2017
Radiation and polarization properties of free-exciton emission from AlN (0001) surface
2007
Observation of the Long Afterglow in AlN Helices
2015
Particulate Photocatalysts for Light-Driven Water Splitting: Mechanisms, Challenges, and Design Strategies
2019 Standout
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
2013
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates
2013 StandoutNobel
Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE
2006 StandoutNobel
Imaging electron emission from diamond and III–V nitride surfaces with photo-electron emission microscopy
1999 StandoutNobel
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
2015
High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes
2017
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
2018
Field emission from well-aligned zinc oxide nanowires grown at low temperature
2002
Characterization of dislocation arrays in AlN single crystals grown by PVT
2011
Polymers for 3D Printing and Customized Additive Manufacturing
2017 Standout
Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate
2007
Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
2007 StandoutNobel
Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
2017
Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%
2013
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
2003 Standout
A study of electron field emission as a function of film thickness from amorphous carbon films
1998
Synthesis of Structurally Defined Ta3N5 Particles by Flux-Assisted Nitridation
2010
Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
2008 StandoutNobel
Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate
2007
Valence band structure of AlN probed by photoluminescence
2008
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
2018
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Bias-Assisted H[sub 2] Gas Generation in HCl and KOH Solutions Using n-Type GaN Photoelectrode
2006
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
2013
Photoelectrochemical Properties of Nonpolar and Semipolar GaN
2007 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
2004 StandoutNobel
Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
2007 StandoutNobel
Sublimation growth of AlN bulk crystals by seeded and spontaneous nucleation methods
2004 Nobel
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
Luminescence properties of highly Si-doped AlN
2006
Bulk AlN growth by physical vapour transport
2014
Field emission properties of carbon nanotubes
2000
AlN bandgap temperature dependence from its optical properties
2008
Development of underfilling and encapsulation for deep-ultraviolet LEDs
2014 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Field emission site densities of nanostructured carbon films deposited by a cathodic arc
2001
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
2007 StandoutNobel
Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction
2007
Long persistent phosphors—from fundamentals to applications
2016 Standout
Thermal Transformation of Metal Oxide Nanoparticles into Nanocrystalline Metal Nitrides Using Cyanamide and Urea as Nitrogen Source
2007
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy
2013 StandoutNobel
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
2014 StandoutNobel
Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio
2006 StandoutNobel
High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
2006 StandoutNobel
Seeded growth of AlN bulk crystals in m- and c-orientation
2009
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Large-area AlN substrates for electronic applications: An industrial perspective
2008
Graphitic carbon nitride materials: variation of structure and morphology and their use as metal-free catalysts
2008 Standout
Determination of satellite valley position in GaN emitter from photoexcited field emission investigations
2011
Field emission spectroscopy from discharge activated chemical vapor deposition diamond
1999
Growth of thick AlN layers by hydride vapor-phase epitaxy
2005
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
2008
Selective photochemical etching of GaN films and laser lift‐off for microcavity fabrication
2008
Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <1120 > and <1100 > Zone-Axes of AlN for Polarity Determination
2013 StandoutNobel
Substrates for gallium nitride epitaxy
2002
Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
2006 StandoutNobel
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2014 Standout
Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates
2002
Works of R. Schlesser being referenced
Electron energy distribution during high-field transport in AlN
2003 Nobel
Seeded growth of AlN on SiC substrates and defect characterization
2008
Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures
2004 Nobel
Mass transfer in AlN crystal growth at high temperatures
2004
Energy distribution of field emitted electrons from diamond coated molybdenum tips
1997
Electron emission mechanism from cubic boron nitride-coated molybdenum emitters
1998
AlN bulk crystals grown on SiC seeds
2005
Wet Etching of Bulk AlN Crystals
2006
Growth of AlN bulk crystals from the vapor phase
2001
Seeded growth of AlN on N- and Al-polar AlN seeds by physical vapor transport
2005
Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport
2012
Characterization of bulk grown GaN and AlN single crystal materials
2006
Band-edge exciton states in AlN single crystals and epitaxial layers
2004
Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules
2013
Crucible materials for growth of aluminum nitride crystals
2005
Seeded growth of AlN bulk single crystals by sublimation
2002
Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates
2011
Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport
2006
Growth of AlN single crystalline boules
2010
The growth and optical properties of large, high-quality AlN single crystals
2004
Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation
2014
Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules
2005
Seeded growth of AlN single crystals by physical vapor transport
2006
Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics
2012
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
2013
Raman, photoluminescence and absorption studies on high quality AlN single crystals
2005
Current-voltage characteristics of n∕n lateral polarity junctions in GaN
2006
High-temperature electromechanical characterization of AlN single crystals
2015
Electron energy distribution of diamond-coated field emitters
1998
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
1998 StandoutNobel
Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
2004
Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
2012
Optically pumped UV lasers grown on bulk AlN substrates
2012
Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
2002
Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere
2002
Effect of thermal environment evolution on AlN bulk sublimation crystal growth
2007
Bias voltage dependent field-emission energy distribution analysis of wide band-gap field emitters
1997
Field emission energy distribution analysis of wide-band-gap field emitters
1998