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Citing Papers
Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN
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Nanotechnology for environmentally sustainable electromobility
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Thin films and devices of diamond, silicon carbide and gallium nitride
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Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
2002 StandoutNobel
Deposition of III-N thin films by molecular beam epitaxy
1994 StandoutNobel
A critical review of ohmic and rectifying contacts for silicon carbide
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Combined H2O/CO2 Solid Oxide Electrolysis for Mars In Situ Resource Utilization
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III-V nitrides for electronic and optoelectronic applications
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Designing nanostructured Si anodes for high energy lithium ion batteries
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Equation of state of the rocksalt phase of III–V nitrides to 72 GPa or higher
1997 StandoutNobel
Excitation-Power-Density Dependent ac Surface Photovoltages in Radiation-Damaged Si Wafer
1984
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Determination of Surface Charge and Interface Trap Densities in Naturally Oxidized n-Type Si wafers Using ae Surface Photovoltages
1987
Growth of AlN, GaN and AlxGa1 − xN thin films on vicinal and on-axis 6HSiC(0001) substrates
1997 StandoutNobel
Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide
1992 StandoutNobel
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
1991 StandoutNobel
Progress and prospects of group-III nitride semiconductors
1996
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Molecular beam epitaxy of nitride thin films
1993 StandoutNobel
Surface photovoltage phenomena: theory, experiment, and applications
1999 Standout
Survey of dopants in silicon for 2–2.7 and 3–5 μm infrared detector application
1977
Sustainable hydrocarbon fuels by recycling CO 2 and H 2 O with renewable or nuclear energy
2010 Standout
Highly Interconnected Si Nanowires for Improved Stability Li‐Ion Battery Anodes
2011
Free and bound excitons in thin wurtzite GaN layers on sapphire
1996 StandoutNobel
Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy
1989 StandoutNobel
Brillouin scattering study of bulk GaN
1999 StandoutNobel
Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
1997 StandoutNobel
Pressure-induced phase transition in SiC
1993 StandoutNobel
Sustainable Conversion of Carbon Dioxide: An Integrated Review of Catalysis and Life Cycle Assessment
2017 Standout
Growth kinetics and characterizations of gallium nitride thin films by remote PECVD
1993
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Gas-source molecular beam epitaxy of III–V nitrides
1997 StandoutNobel
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
1997 StandoutNobel
Layer-by-layer epitaxial growth of GaN at low temperatures
1993 StandoutNobel
Layer-by-layer growth of SiC at low temperatures
1993 StandoutNobel
Growth of GaN and AlGaN for UV/blue p-n junction diodes
1993 StandoutNobel
Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization
1996 StandoutNobel
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
1988 StandoutNobel
UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC
1996 StandoutNobel
Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy
1996 StandoutNobel
Prospects for device implementation of wide band gap semiconductors
1992
Metal Schottky barrier contacts to alpha 6H-SiC
1992 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Silicon nanowires for Li-based battery anodes: a review
2013
Valence band discontinuity of the (0001) 2H-GaN / (111) 3C-SiC interface
1999 StandoutNobel
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
1993 StandoutNobel
Eutectic Gallium‐Indium (EGaIn): A Liquid Metal Alloy for the Formation of Stable Structures in Microchannels at Room Temperature
2008 Standout
Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
1993
Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films
1999
Study on the influence of annealing effects in GaN VPE
1983
Infrared detectors: status and trends
2003 Standout
Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers*
1984
Luminescence and lattice parameter of cubic gallium nitride
1992 StandoutNobel
Alloy Negative Electrodes for Li-Ion Batteries
2014 Standout
Directional Solidification and Melting of Eutectic GaIn
1999
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
1998 StandoutNobel
Quantum Mechanical Continuum Solvation Models
2005 Standout
Hydrogen interactions with defects in crystalline solids
1992 Standout
AlN/GaN superlattices grown by gas source molecular beam epitaxy
1991 StandoutNobel
Sublimation growth and characterization of bulk aluminum nitride single crystals
1997 StandoutNobel
Proton Tunneling with Millielectrovolt Energies at the Be-H Acceptor Complex in Silicon
1986
Band parameters for nitrogen-containing semiconductors
2003 Standout
Effective polarizability of a molecule physisorbed on a spherical metal particle: nonlocal effects
1987
Works of R. K. Crouch being referenced
Human Exploration and Development of Space: Strategic Plan
2001
Thermal ionization energy of lithium and lithium-oxygen complexes in single-crystal silicon
1969
Si and GaAs photocapacitive MIS infrared detectors
1980
A procedure to visualize the melt-solid interface in Bridgman grown germanium and lead tin telluride
1986
Properties of GaN grown on sapphire substrates
1978
A study of beryllium-hydrogencomplexes in silicon
1974
Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal Silicon
1972