Citation Impact
Citing Papers
Single event effects in static and dynamic registers in a 0.25 /spl mu/m CMOS technology
1999
Radiation-induced soft errors in advanced semiconductor technologies
2005 Standout
Basic mechanisms and modeling of single-event upset in digital microelectronics
2003 Standout
Total ionizing dose effects in MOS oxides and devices
2003 Standout
SEU-hardened storage cell validation using a pulsed laser
1996
Theoretical Maximum Efficiencies of Optimized Slab and Spherical Betavoltaic Systems Utilizing Sulfur-35, Strontium-90, and Yttrium-90
2012
Theoretical Maximum Efficiency for a Linearly Graded Alphavoltaic Nuclear Battery
2012
Cosmic and terrestrial single-event radiation effects in dynamic random access memories
1996
Analysis of multiple bit upsets (MBU) in CMOS SRAM
1996
Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node
2003
Analysis of the influence of MOS device geometry on predicted SEU cross sections
1999
Various SEU conditions in SRAM studied by 3-D device simulation
2001
Charge collection and SEU from angled ion strikes
1997
Single particle-induced latchup
1996
A new class of single event hard errors [DRAM cells]
1994
Lest we remember
2009 Standout
Device simulation of charge collection and single-event upset
1996
Single-word multiple-bit upsets in static random access devices
1993
Single event upset at ground level
1996
Simulation technologies for cosmic ray neutron-induced soft errors: Models and simulation systems
1999
A review of nuclear batteries
2014 Standout
Contribution of SiO/sub 2/ in neutron-induced SEU in SRAMs
2003
Radiation Effects in MOS Oxides
2008 Standout
Analysis of radiation effects on individual DRAM cells
2000
Destructive single-event effects in semiconductor devices and ICs
2003
SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments
2001
Incidence of multi-particle events on soft error rates caused by n-Si nuclear reactions
2000
Upset hardened memory design for submicron CMOS technology
1996 Standout
Radiation effects in advanced microelectronics technologies
1998
Works of R. Ecoffet being referenced
Recent trends in single-event effect ground testing
1996
SEE in-flight measurement on the MIR orbital station
1994
SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain
1998
Heavy ion induced single hard errors on submicronic memories (for space application)
1992
Cell design modifications to harden an N-channel power IGBT against single event latchup
1999
Low LET cross-section measurements using high energy carbon beam [DRAMs/SRAMs]
1997
Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations
1999
Low energy proton induced SEE in memories
1997
SEU critical charge and sensitive area in a submicron CMOS technology
1997
SEE results using high energy ions
1995
Space radiation evaluation of 16 Mbit DRAMs for mass memory applications
1994
The latchup risk of CMOS-technology in space
1993
Two CMOS memory cells suitable for the design of SEU-tolerant VLSI circuits
1994
SEU sensitive depth in a submicron SRAM technology
1998
Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs
2002
An empirical model for predicting proton induced upset
1996
Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices
1997
The effect of layout modification on latchup triggering in CMOS by experimental and simulation approaches
1994