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1977
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1981
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Photoreflectance, absorption, and nuclear resonance reaction studies of AlxGa1−x As grown by molecular-beam epitaxy
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Temperature dependence of the band gap of silicon
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Works of R. E. Nahory being referenced
Photoreflectance from Landau Levels in InSb
1969
Band Structure and Optical Properties of In1-xGaxAsyP1-y
1980
An In0.53Ga0.47As junction field-effect transistor
1980
In 0.53 Ga 0.47 As p-i-n photodiodes for long-wavelength fibre-optic systems
1979
Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy
1989
Continuous operation of 1.0-μm-wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbx double-heterostructure injection lasers at room temperature
1976
Real-time optical diagnostics for measuring and controlling epitaxial growth
1993
InAs strained-layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range
1988
Threshold characteristics and extended wavelength operation of GaAs1−x′Sbx′/ AlyGa1−yAs1−xSbx double-heterostructure lasers
1977
Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiver
1980
Growth and properties of liquid-phase epitaxial GaAs1−xSbx
1977
Optical properties ofIn 1 − x Ga x As y P 1 − y
1982
Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP
1980
Optical properties and band structure of short-period GaAs/AlAs superlattices
1987
Binary phase Fresnel lenses for generation of two-dimensional beam arrays
1991
Measurement of theIn 0.52 Al 0.48 In 0.52 Al 0.48
1995
Temperature dependence of InGaAsP double-heterostructure laser characteristics
1979
Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y
1980
The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap
1978
Efficient GaAs1−xSbx/AlyGa1−yAs1−xSbx double heterostructure LED’s in the 1-μm wavelength region
1975
Oscillatory Photoconductivity of Epitaxial GaAs
1969
Valley-Orbit Splitting of Free Excitons? The Absorption Edge of Si
1970
Oscillatory Photoconductivity and Energy-Band Parameters of ZnTe
1966
Observation of Electronic Band-Structure Effects on Impact Ionization by Temperature Tuning
1977
Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm
1978
Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy
1991
Formation of The Interface between InP and Arsenic Based Alloys by Chemical Beam Epitaxy
1992
Photoluminescence and Photoconductivity in Undoped Epitaxial GaAs
1969
Exciton reflectance and photoreflectance in GaAs
1969
Optical investigations of the band structure of strained InAs/AlInAs quantum wells
1988
The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs
1978
Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing
1988
Optical transitions and chemistry at the In0.52Al0.48As/InP interface
1992
Efficient LPE-grown Inx Ga1 −x As LEDs at 1–1.1-μm wavelengths
1974
Hot-carrier relaxation in photoexcited In0.53Ga0.47As
1980
Temperature dependence of impact ionisation rates in GaAs between 20° and 200°C
1979
Raman scattering studies of surface space charge layers and Schottky barrier formation in InP
1979
Lattice vibrations of In1−xGaxAsyP1−y quaternary compounds
1978
Arsenic doped ZnSe grown by molecular-beam epitaxy
1990
Hot electron dynamics in GaAs avalanche devices: Competition between ballistic behavior and intervalley scattering
1979
A NEW MODEL FOR THE TEMPERATURE-DEPENDENT CdS LASER
1970
Indirect—Band-Gap Super-Radiant Laser in GaP Containing Isoelectronic Traps
1971
Electrical and optical characterization of back-to-back Schottky (Al,Ga)As/NiAl/(Al,Ga)As molecular beam epitaxially grown double-heterostructure diodes
1990
Stimulated Emission from the Excitonic Molecules in CuCl
1971
High-efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm
1978
Fast photoconductive detector using p-In0.53Ga0.47As with response to 1.7 μm
1981
Optical gain in semiconductors
1973
Room-temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice-matched (Ga,In)As substrates
1990
Reflectance Modulation by the Surface Field in GaAs
1968
Luminescence investigations of highly strained-layer InAs-GaAs superlattices
1986
Impact ionization rates for electrons and holes in GaAs1−xSbx alloys
1976
Growth and characterization of liquid−phase epitaxial InxGa1−xAs
1975
Threshold dependence on active-layer thickness in InGaAsP/InP d.h. lasers
1978
Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP
1978
Low-threshold room-temperature double-heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbx injection lasers at 1-μm wavelengths
1975