Citation Impact

Citing Papers

Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Growth and applications of Group III-nitrides
1998
Photonic crystal laser lift-off GaN light-emitting diodes
2006 StandoutNobel
Nitride‐based hetero‐field‐effect‐transistor‐type photosensors with extremely high photosensitivity
2013 Nobel
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
1999
p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors
2008
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Temperature quenching of photoluminescence intensities in undoped and doped GaN
1999
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Exciton binding energies and band gaps in GaN bulk crystals
1998
AlGaN/GaInN/GaN heterostructure field‐effect transistor
2011 StandoutNobel
Optical-phonon confinement and scattering in wurtzite heterostructures
1998
Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields
1999
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
1998 StandoutNobel
Growth condition dependence of GaN crystal structure on (0 0 1)GaAs by hydride vapor-phase epitaxy
1998
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
Metalorganic Molecular Beam Epitaxy of InGaN Layers and Their Optical Properties
1999
A comprehensive review of ZnO materials and devices
2005 Standout
Quantized states inGa1−xInxN/GaNheterostructures and the model of polarized homogeneous quantum wells
2000 StandoutNobel
Thermal Decomposition of the Non-Interstitial Hydrides for the Storage and Production of Hydrogen
2004 Standout
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
Recombination dynamics of free and localized excitons inGaN/Ga0.93Al0.07Nquantum wells
1998
Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
1998
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
1999
Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
2001
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
1999
Improvement of Low-Intensity Ultraviolet Photodetectors Based on AlGaN with Low Threading Dislocation Density
1999 StandoutNobel
Recent advances in the chemistry of the Group 13 metals: hydride derivatives and compounds involving multiply bonded Group 13 metal atoms
1999
Lattice and energy band engineering in AlInGaN/GaN heterostructures
2000
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
Al x Ga 1−x N:Si Schottky barrier photodiodes with fast response and high detectivity
1998
Dimensionality of excitons in laser-diode structures composed ofInxGa1−xNmultiple quantum wells
1999 StandoutNobel
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures
2000 StandoutNobel
Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure
1999 StandoutNobel
Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells
1998
Detailed feasibility study on a flame detector using AlGaN photosensors
2000 Nobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
2013 StandoutNobel
III–nitrides: Growth, characterization, and properties
2000
Free excitons with n=2 in bulk GaN
1997
Low noise p-π-n GaN ultraviolet photodetectors
1997
Optically pumped lasing of ZnO at room temperature
1997 Standout
An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances
1997 StandoutNobel
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
1999
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
2003 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Piezoelectric charge densities in AlGaN/GaN HFETs
1997
High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts
1998
Room-Temperature Ultraviolet Nanowire Nanolasers
2001 StandoutScience
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition
1998
Investigation of the Leakage Current in GaN P-N Junctions
1998 StandoutNobel
GaN: Processing, defects, and devices
1999
Excitation density dependence of photoluminescence in GaN:Mg
1998
Emerging gallium nitride based devices
1995
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Ab initio study of phonons in wurtzite AlxGa1−xN alloys
2000
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy
1999
Large-scale synthesis of single crystalline gallium nitride nanowires
1999
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode
1997
Phonons and related crystal properties from density-functional perturbation theory
2001 Standout
High transconductance AlGaN/GaN heterostructurefield effect transistors on SiC substrates
1997
Luminescences from localized states in InGaN epilayers
1997 StandoutNobel
Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching with Hot Phosphoric Acid
2001 StandoutNobel
Free Excitons in GaN
1996 StandoutNobel
Localized exciton and its stimulated emission in surface mode from single-layerInxGa1−xN
1998
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
1999
Oxidation study of GaN using x-ray photoemission spectroscopy
1999
Schottky barrier photodetectors based on AlGaN
1998
Influence of potential fluctuations on electrical transport and optical properties in modulation-dopedGaN/Al0.28Ga0.72Nheterostructures
1998 StandoutNobel
Electrical effects of plasma damage in p-GaN
1999
Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO
2004
MOVPE of GaInN heterostructures and quantum wells
1998
Spatially resolved cathodoluminescence spectra of InGaN quantum wells
1997 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures
2001 StandoutNobel
Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis
1999
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
III–Nitride UV Devices
2005
Logic Gates and Computation from Assembled Nanowire Building Blocks
2001 StandoutScience
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
1997
Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <1120 > and <1100 > Zone-Axes of AlN for Polarity Determination
2013 StandoutNobel
High gain GaN/AlGaN heterojunction phototransistor
1998
Fabrication of GaN nanotubular material using MOCVD with an aluminium oxide membrane
2005
Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer
2001 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures
2014 Standout

Works of Q. Chen being referenced

Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency
1996
Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition
1996
Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells
1997
Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
1996
Study of contact formation in AlGaN/GaN heterostructures
1997
Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
1995
Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates
1996
High transconductance heterostructure field-effect transistors based on AlGaN/GaN
1996
High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
1996
Dependence of DC and RF characteristics on gatelength for high currentAlGaN/GaN HFETs
1997
Metal contacts to n-type GaN
1998
Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes
1997
Time-resolved photoluminescence studies of InGaN epilayers
1996
Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
1996
The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN
1998
8 × 8 GaN Schottky barrier photodiode arrayfor visible-blind imaging
1997
High-power 10-GHz operation of AlGaN HFET's on insulating SiC
1998
Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
1997
Gated photodetector based on GaN/AlGaN heterostructurefieldeffect transistor
1995
Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates
1997
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
1998
CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
1996
Schottky barrier detectors on GaN for visible–blind ultraviolet detection
1997
Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells
1996
Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices
1995
Microwave performance of 0.25 µm doped channelGaN/AlGaN heterostructure field effect transistor at elevated temperatures
1997
High-temperature performance of AlGaN/GaN HFETs on SiC substrates
1997
Photoluminescence study of high quality InGaN–GaN single heterojunctions
1996
Two-dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition
1995
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