Citation Impact

Citing Papers

Tunnel field-effect transistors as energy-efficient electronic switches
2011 StandoutNature
Single-layer MoS2 transistors
2011 Standout
Silanization of quartz, silicon and mica surfaces with light-driven molecular motors: construction of surface-bound photo-active nanolayers
2013 StandoutNobel
Recent developments in compact ultrafast lasers
2003 StandoutNature
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
2012 Standout
The Meyer model revisited: why is charge not conserved? (MOS transistor)
1989
Plasma sources based on the propagation of electromagnetic surface waves
1991 Standout
Bonding of silicon wafers for silicon-on-insulator
1988 Standout
Device Requirements for Optical Interconnects to Silicon Chips
2009 Standout
High-performance heat sinking for VLSI
1981 Standout
Low power microelectronics: retrospect and prospect
1995
A low-power low-noise cmos for amplifier neural recording applications
2003 Standout
Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
1998 StandoutNobel
Total dose failures in advanced electronics from single ions
1993
Spreading resistance in submicron MOSFET's
1983
Micropower high-performance SC building block for integrated low-level signal processing
1985
New Approaches to Nanofabrication:  Molding, Printing, and Other Techniques
2005 Standout
The surface chemistry of amorphous silica. Zhuravlev model
2000 Standout
Edge emission in melt-grown ZnSexS1−x
1978
Power-supply voltage impact on circuit performance for half and lower submicrometer CMOS LSI
1990
Total ionizing dose effects in MOS oxides and devices
2003 Standout
Amorphization And Recrystallization Processes In Monocrystaline Beta Silicon Carbide Thin Films
1985 StandoutNobel
The interaction of water with solid surfaces: fundamental aspects revisited
2002 Standout
Atomic Layer Deposition: An Overview
2009 Standout
Atomic layer growth of SiO2 on Si(100) using SiCl4 and H2O in a binary reaction sequence
1995
MOSFET thermal noise modeling for analog integrated circuits
1994
A new three-terminal tunnel device
1987
Scaling optoelectronic-VLSI circuits into the 21st century: a technology roadmap
1996
Comparison of range and range straggling of implanted 10B and 11B in silicon
1977
Polycrystalline silicon thin film transistors
1995
Principle and applications of an autocharge-compensated sample and hold circuit
1995
Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
1997
Low-temperature operation of silicon dynamic random-access memories
1989
A Monte Carlo computer program for the transport of energetic ions in amorphous targets
1980 Standout
A 1.5-V, 1.5-GHz CMOS low noise amplifier
1997 Standout
The effect of high fields on MOS device and circuit performance
1984
Latin Hypercube Sampling Monte Carlo Estimation of Average Quality Index for Integrated Circuits
1997
Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFTs for vertical integration applications
1999
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Low-power CMOS digital design
1992 Standout
Surface Chemistry for Atomic Layer Growth
1996
Lest we remember
2009 Standout
Electron-beam lithography for small MOSFET's
1981
3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration
2001 Standout
Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications
1994
Extracting secret keys from integrated circuits
2005 Standout
Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnSxSe1-x
1987 StandoutNobel
Alternate State Variables for Emerging Nanoelectronic Devices
2008 StandoutNobel
Wafer bonding for silicon-on-insulator technologies
1986
Present status of thin oxide films creation in a microwave plasma
1980
A first-order charge conserving MOS capacitance model
1990
Utilization of plasma hydrogenation in stacked SRAM's with poly-Si PMOSFET's and bulk-Si NMOSFET's
1991
The electrical characteristics of ion implanted compound semiconductors
1981
Relating statistical MOSFET model parameter variabilities to IC manufacturing process fluctuations enabling realistic worst case design
1994
A comparison of semiconductor devices for high-speed logic
1982
Latin hypercube sampling and the propagation of uncertainty in analyses of complex systems
2003 Standout
Molecular electronics in silico
2008
Fundamentals of Modern VLSI Devices
2009 Standout
Effects of ion etching on the properties of GaAs
1978
Generalized scaling theory and its application to a ¼ micrometer MOSFET design
1984
Appearance of Single-Crystalline Properties in Fine-Patterned Si Thin Film Transistors (TFTs) by Solid Phase Crystallization (SPC)
1993
Circuit techniques for reducing the effects of op-amp imperfections: autozeroing, correlated double sampling, and chopper stabilization
1996 Standout
High-κ gate dielectrics: Current status and materials properties considerations
2001 Standout

Works of P.K. Chatterjee being referenced

Temperature dependence of photoluminescence from Be-implanted GaAs
1976
A new edge-defined approach for submicrometer MOSFET fabrication
1981
Luminescence in ZnSe with Na and Al doping
1973
Statistical modeling for efficient parametric yield estimation of MOS VLSI circuits
1985
Leakage studies in high-density dynamic MOS memory devices
1979
Reduced lateral diffusion and reverse leakage in Be-implanted GaAs1−xPxdiodes
1977
Trench transistor DRAM cell
1986
Process and performance comparison of an 8K × 8-bit SRAM in three stacked CMOS technologies
1985
An Integrated and Efficient Approach for MOS VLSI Statistical Circuit Design
1986
An Investigation of the Charge Conservation Problem for MOSFET Circuit Simulation
1983
Photoluminescence from Be-implanted GaAs
1975
Comment on ’’Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope 10B in Si’’
1975
The impact of scaling laws on the choice of n-channel or p-channel for MOS VLSI
1980
Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon
1985
R.F. plasma deposition of silicon nitride layers
1978
Statistical Modeling for Efficient Parametric Yield Estimation of MOS VLSI Circuits
1985
1-V microsystems/spl minus/scaling on schedule for personal communications
1994
Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source
1984
A 4-Mbit DRAM with trench-transistor cell
1986
Rankless by CCL
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