P.J. Tsang

Electronics based on two-dimensional materials

A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

Metastable Alumina Polymorphs: Crystal Structures and Transition Sequences

CMOS scaling for high performance and low power-the next ten years

Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

Surface photovoltage phenomena: theory, experiment, and applications

A high-performance 0.25- mu m CMOS technology. I. Design and characterization

Solid State Memory Development in IBM

Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET's

On the narrow-emitter effect of advanced shallow-profile bipolar transistors

Two-dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopy

On the accuracy of channel length characterization of LDD MOSFET's

3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration

Factors influencing the κ-Al2O3 → α-Al2O3 phase transformation during CVD growth

Submicrometer-channel CMOS for low-temperature operation

Fundamentals of Modern VLSI Devices

Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor

Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor

Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology

Amorphous CVD Al2 O 3 Films by Ta‐Doping and Their Physicochemical Properties